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Etching-resistant positive photoresist

A positive photoresist and etching-resistant technology, applied in the field of photoresist, can solve the problems of affecting the adhesion between the photoresist film and the substrate, the photoresist is easy to crack, and the ability is insufficient, so as to improve the adhesion , Improving the anti-penetration ability and reducing the effect of contact ability

Pending Publication Date: 2022-04-12
SUZHOU RUIHONG ELECTRONIC CHEM CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The positive photoresist of the phenolic resin system currently on the market has insufficient ability to resist long-term high-strength oxidizing acid and acid with strong permeability.
As a result, the acid molecules easily penetrate into the gap between the photoresist film and the substrate, thereby affecting the adhesion between the photoresist film and the substrate, and causing the photoresist to crack and fall off easily.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] 100 g of phenolic resin, 10 g of PAC (diazonate sulfonate), 5 g of methylene etherified melamine, 200 g of propylene glycol methyl ether acetate, 250 g of propylene glycol methyl ether, catalyst dodecylbenzene The amount of sulfonic acid is added to 100 ppm.

Embodiment 2

[0034] 100 g of phenolic resin, 50 g of PAC (diazonate sulfonate), 30 g of methylene etherified melamine, 300 g of dipropylene glycol methyl ether, 250 g of cyclohexanone, catalyst to toluenesulfonic acid added The amount is 1000 ppm.

Embodiment 3

[0036] 100 g of phenolic resin, 30 g of PAC (diazonate sulfonate), 18 g of methyl ether melamine, 250 g of propylene glycol methyl ether acetate, 250 g of propylene glycol methyl ether, catalyst dodecylbenzene The amount of sulfonic acid is added to 500 ppm.

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PUM

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Abstract

The invention belongs to the technical field of photoresists, and particularly relates to an etching-resistant positive photoresist which comprises the following components in parts by weight: 100 parts of phenolic resin, 10-50 parts of PAC, 5-30 parts of a curing agent and 450-550 parts of a solvent, and the positive photoresist also comprises 100 to 1000 ppm of a catalyst. According to the etching-resistant positive photoresist, the curing agent and the catalyst are added, so that smooth curing of the photoresist film is guaranteed, the crosslinking density of the phenolic resin is improved, the compactness of the photoresist film is improved, the penetration resistance of the photoresist film is improved, and acid molecules are prevented from permeating between the photoresist film and the base material; therefore, the adhesive force between the photoresist film and the base material is influenced, and the photoresist is easy to crack, fall off and the like.

Description

Technical field [0001] The present application belongs to the field of photoresist technology, which relates to a positive photoresist with etch resistant. Background technique [0002] Photoresist is a thin film material commonly used in photolithography processes, typically in the main composition of photosensitive resins, sensitivity agents and solvents. The photoresist is divided into a positive photoresist and negative photoresist depending on the treatment process. Among them, the positive photoresist is in the photolithography process, and the portion of the photoresist film is washed back by the developing liquid, and the unexposed portion is not exposed to form a pattern. [0003] At present, the positive photoresist of the phenolic resin system on the market, when the high-strength oxidative acid, the etching of the penetrated acid is insufficient, and the ability is insufficient. It causes acid molecules to penetrate between the photoresist film and the substrate, ther...

Claims

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Application Information

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IPC IPC(8): G03F7/004G03F7/039
Inventor 陈韦帆郑祥飞俞灏洋马骥
Owner SUZHOU RUIHONG ELECTRONIC CHEM CO LTD
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