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Diamond/block copper substrate diffusion bonding process and structure based on diamond indirect stretching structure

A tensile structure and diffusion bonding technology, used in metal processing equipment, welding equipment, manufacturing tools, etc., can solve the problem that the stretching of diamond films cannot be achieved in batches, the flatness of the bonding interface is uneven, and the effect of affecting diffusion bonding, etc. problems, to avoid organic particles sticking, the bonding pressure is concentrated, and the solder layer is too thick.

Active Publication Date: 2022-04-19
WUHAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, in the field of diamond composite materials, in the preparation process of diamond and metal composite materials, in order to improve the bonding strength between diamond and metal, boron and its compound layer are often introduced between diamond and metal, but in the block that needs to be bonded When laying metal materials on the surface, the traditional method of spin coating will cause uneven thickness of the solder layer and the overall thickness of the solder layer will become thicker, which is not good for the overall bonding, so the thickness of the solder layer needs to be controlled
[0004] In addition, cleaning the bonding surface by traditional wet process will bring organic particles to stick to dirt, which will cause unevenness to the flatness of the bonding interface and affect the effect of diffusion bonding.
At the same time, on the issue of diamond film stretching, traditional methods cannot realize the stretching of diamond films in batches, and the types of tensile samples are single, so a structure and process that can stretch diamond films in batches is needed

Method used

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  • Diamond/block copper substrate diffusion bonding process and structure based on diamond indirect stretching structure
  • Diamond/block copper substrate diffusion bonding process and structure based on diamond indirect stretching structure
  • Diamond/block copper substrate diffusion bonding process and structure based on diamond indirect stretching structure

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Effect test

Embodiment 1

[0054] In this embodiment, a diamond / block copper substrate diffusion bonding process based on the diamond indirect tensile structure comprises the following steps:

[0055] 1) A wet etching method is used to obtain three-dimensional geometric figures arranged in an array on the surface of the bulk copper substrate.

[0056] 2) Perform mechanical polishing on the surface of the bulk copper substrate to make the surface flatness lower than 800nm ​​(not limited to this), and the roughness to be 100-500nm (not limited to this), and use plasma cleaning to remove surface impurities.

[0057] 3) Nano-silver solder is selected, and nano-silver is sputtered onto the bulk copper substrate to ensure that the thickness of the solder layer is uniform. At the same time, high-temperature treatment can make part of the solder layer fall off to control the thickness of the solder layer.

[0058] 4) In a vacuum environment, make the diamond film into a "cross" structure and embed it, apply a pre...

Embodiment 2

[0061] Such as Image 6 As shown, another embodiment of the diamond / block copper substrate diffusion bonding process and structure based on the diamond indirect tensile structure, its difference from Example 1 is that the wet etching method is used on the block copper substrate A groove in the shape of the diamond film is obtained, so that the diamond film is embedded in it, and the indirect stretching of the diamond film can also be realized.

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Abstract

The invention discloses a diamond / block copper substrate diffusion bonding process and structure based on a diamond indirect stretching structure. The structure mainly comprises a cuboid block copper substrate, and a three-dimensional diamond film which is arranged in an array mode and is in a geometric figure shape and a cross shape and is used for fixing the diamond film. The diffusion bonding process comprises the following steps: carrying out mechanical polishing treatment on a block copper substrate, carrying out plasma cleaning, sputtering an alloy solder on the surface, applying temperature and pressure to a diamond film and the block copper substrate in a vacuum environment to realize diffusion bonding of the diamond film and the block copper substrate, opening the block copper substrate in a displacement / force / heat / electricity manner to drive the diamond film to stretch, and carrying out diffusion bonding on the diamond film and the block copper substrate. And the strain is indirectly generated. The thickness of the alloy solder layer can be uniform and controllable, the shear strength and bonding area of diffusion bonding are improved, the reliability of diffusion bonding is improved, the geometric figure structure is adjusted to adapt to the to-be-stretched film, and the universality of the diamond film is improved while efficient and indirect stretching of the diamond film is achieved.

Description

technical field [0001] The invention relates to the field of diamond composite materials and diffusion bonding technology, in particular to a diamond / block copper substrate diffusion bonding technology and structure based on a diamond indirect tensile structure. Background technique [0002] Diffusion bonding of diamond / bulk copper substrate based on diamond indirect tensile structure is a kind of thermocompression bonding. Firstly, metal materials with high diffusivity such as gold, copper or aluminum are spin-coated on the wafers and blocks to be bonded, and then heated and pressed to bond the block copper and the diamond film to be bonded together. Diffusion is the result of metal atoms mixing with each other, resulting in extremely high bonding strength and enabling hermetic packaging. [0003] At present, in the field of diamond composite materials, in the preparation process of diamond and metal composite materials, in order to improve the bonding strength between dia...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B23K20/02
CPCB23K20/02
Inventor 刘胜张贺辉郭宇铮王诗兆孙亚萌吴改沈威汪启军马坤
Owner WUHAN UNIV
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