Angle insensitive narrow-band filter based on double plasmon resonance

A double plasmon resonance and narrow-band filter technology, which is applied in the field of optical filters, can solve problems such as limiting the application range of narrow-band filters, narrow-band light wavelength or energy intensity changes, and achieves simple structure, fewer layers, and easy integrated effect

Pending Publication Date: 2022-04-22
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, these filters still cannot solve the problem of being sensitive to the angle of incident light, that is, when the incident angle changes, the wavelength or energy intensity of the outgoing narrow-band light will ch

Method used

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  • Angle insensitive narrow-band filter based on double plasmon resonance
  • Angle insensitive narrow-band filter based on double plasmon resonance
  • Angle insensitive narrow-band filter based on double plasmon resonance

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] In this example, we will demonstrate an angle-insensitive narrow-band filter based on a one-dimensional metal grating in the near-infrared band.

[0031] The structure of the narrowband filter is as figure 2 As shown, from bottom to top: substrate 1, the material selected is quartz substrate; one-dimensional Au grating 2, the period is 110nm, the thickness is 20nm, the width of silver is 89nm, and the filling medium is SiO 2 ; The dielectric isolation layer 3 is made of SiO 2 , with a thickness of 5nm; the metal layer 4 is made of Ag with a thickness of 40nm; the dielectric isolation layer 5 is made of SiO 2 , the thickness is 5nm; one-dimensional Au grating 6, the period is 110nm, the thickness is 20nm, the silver width is 90nm, and the filling medium is SiO 2 ; The protective layer 7 is made of SiO 2 , with a thickness of 10nm. Incident direction as figure 2 As shown in (a), the angle with the vertical line is θ. P light is defined as the direction of the elec...

Embodiment 2

[0034] In Embodiment 1, we demonstrate the design of an angle-insensitive filter for near-infrared. In fact, we can design angle-insensitive filters in different wavelength bands by reasonably changing the width, thickness, period and other factors of the one-dimensional grating 2 and the one-dimensional grating 6 .

[0035] In this example, we will demonstrate an angle-insensitive narrow-band filter based on a 1D metal grating in the visible band.

[0036] The structure of the narrowband filter is as figure 2 As shown in (a), from bottom to top: substrate 1, the material selected is quartz substrate; one-dimensional Au grating 2, period is 20nm, thickness is 10nm, silver width is 10nm, and the filling medium is SiO 2 ; The dielectric isolation layer 3 is made of SiO 2 , with a thickness of 10nm; the metal layer 4 is made of Ag with a thickness of 50nm; the dielectric isolation layer 5 is made of SiO 2 , the thickness is 10nm; one-dimensional Au grating 6, the period is 20...

Embodiment 3

[0039] In this example, we will demonstrate an angle-insensitive narrow-band filter based on a 1D metal grating in the mid-infrared band.

[0040] The structure of the narrowband filter is as figure 2 As shown in (a), from bottom to top: Substrate 1, the material selected is CaF 2 Substrate; one-dimensional Ag grating 2, period is 1.50 μm, thickness is 1.50 μm, silver width is 1 μm, filling medium is CaF 2 ; The dielectric isolation layer 3 is made of CaF 2 , with a thickness of 10nm; the metal layer 4 is made of Ag with a thickness of 20nm; the dielectric isolation layer 5 is made of CaF 2 , thickness is 10nm; one-dimensional Ag grating 6, period is 1.50μm, thickness is 1.50μm, silver width is 1μm, filling medium is CaF 2 ; Protective layer 7 is selected to be removed. Incident direction as figure 2 As shown in (a), the angle with the vertical line is θ. P light is defined as the direction of the electric field parallel to figure 2 (a) Light in the plane shown, S li...

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Abstract

The invention discloses an angle insensitive narrow-band filter based on double plasmon resonance. The device structure is composed of a substrate, a metal grating layer, a dielectric isolation layer, a metal layer, a dielectric isolation layer, a metal grating layer and a coating layer from bottom to top. By means of the coupling effect of upper and lower same-frequency plasmon resonance, incident light with a specific wavelength can be transmitted, light with other wavelengths can be reflected by the metal layer, and a narrow-band filter is formed. Moreover, the boundary condition for exciting plasmon resonance is a dipole boundary condition and is irrelevant to the incident angle, so that the filter has excellent angle insensitivity, and the problem that the band-pass peak position of a traditional narrow-band filter sensitively changes along with the incident angle is solved.

Description

technical field [0001] The invention relates to the field of optical filters, in particular to an angle-insensitive filter. Background technique [0002] A narrow-band filter is a filter that only allows light of a single wavelength to pass through. It plays a pivotal role in the entire field of spectroscopy and optical communication. [0003] Currently, the most common filter on the market is the Fabry-Perot (F-P) filter, which consists of upper and lower mirrors and a dielectric cavity layer in the middle. When the wavelength of the incident light satisfies the resonance condition, its transmission spectrum will have a very high peak, corresponding to a high transmittance, while other wavelengths of light will be reflected, and finally form a narrow-band transmission. However, when the angle of the incident light increases, the equivalent length of the cavity layer of the F-P filter becomes shorter, resulting in a blue-shift of the transmission center wavelength. For exa...

Claims

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Application Information

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IPC IPC(8): G02B5/20G02B5/26G02B5/18
CPCG02B5/203G02B5/26G02B5/1866Y02D30/70
Inventor 王少伟刘清权李辰璐玄志一左易陆卫
Owner SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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