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Method for regulating anisotropic damping in ferromagnetic/heavy metal film system based on stress

An anisotropy and stress control technology, which is applied in the fields of magnetic field controlled resistors, components of electromagnetic equipment, manufacturing/processing of electromagnetic devices, etc., can solve the problem of limiting the application range of spintronic devices, ferromagnetic single crystal thin Complex semiconductor heterojunction preparation process, strict requirements on film thickness and crystal structure, etc., to achieve the effect of convenient implementation, simple structure and remarkable effect

Pending Publication Date: 2022-05-13
NANJING UNIV OF SCI & TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the preparation process of the above-mentioned ferromagnetic single crystal thin film / semiconductor heterojunction is complicated, and the thickness and crystal structure of the thin film are strictly required, which limits its application range in practical spintronic devices.

Method used

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  • Method for regulating anisotropic damping in ferromagnetic/heavy metal film system based on stress
  • Method for regulating anisotropic damping in ferromagnetic/heavy metal film system based on stress
  • Method for regulating anisotropic damping in ferromagnetic/heavy metal film system based on stress

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Embodiment 1

[0031] The method of regulating anisotropic damping in ferromagnetic / heavy metal films based on stress, the specific steps are as follows:

[0032] In step 1, the flexible and bendable substrate used is a mica sheet, which is fixed on a concave mold with a radius of curvature of 30 mm before film growth, and the thickness of the mica sheet is 10 μm.

[0033] Step 2, the background vacuum in the cavity is lower than 4×10 -5 Pa, pass through argon gas, the argon pressure is 0.8Pa, radio frequency sputtering Cu target, on the above-mentioned flexible substrate, deposit the metal buffer layer Cu with a thickness of 5nm, and the sputtering power is 80W.

[0034] Step 3, the background vacuum in the cavity is lower than 4×10 -5 At Pa, argon gas is introduced, the argon pressure is 0.3Pa, and the radio frequency sputtering Fe 20 Ni 80 Target, deposited on the above flexible substrate with a thickness of 15nm ferromagnetic metal Fe 20 Ni 80 , the sputtering power is 80W.

[0035...

Embodiment 2

[0037] This embodiment is basically the same as Embodiment 1, the only difference is that the convex mold is used and the radius of curvature of the convex mold is 30 mm.

Embodiment 3

[0039] This embodiment is basically the same as Embodiment 1, the only difference is that the radius of curvature of the concave mold is 20mm.

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Abstract

The invention discloses a method for regulating anisotropic damping in a ferromagnetic / heavy metal film system based on stress. According to the method, a ferromagnetic / heavy metal film system is grown on a flexible bendable substrate, and anisotropic magnetic damping in the ferromagnetic / heavy metal film system is regulated and controlled by applying prestress in the ferromagnetic / heavy metal film growth process according to the bendable characteristic of the flexible substrate. The method disclosed by the invention is low in implementation difficulty, easy to realize regulation and control of anisotropic damping of a ferromagnetic / heavy metal film system, and suitable for the field of spin-orbit coupled electronic devices.

Description

technical field [0001] The invention belongs to the field of spin electronics, and relates to a stress-based method for regulating anisotropic damping in a ferromagnetic / heavy metal film system. Background technique [0002] Spintronics devices based on magnetic thin film systems use the charge and spin properties of electrons for information processing. They have the advantages of high response speed, low power consumption, and non-volatility. They are key components of next-generation magnetic storage and logic devices. Become the core competitive technology of emerging electronic information. Among them, the damping coefficient of the magnetic film directly determines the power consumption and operating frequency of the related spintronic devices, so how to regulate it has become one of the core issues and key challenges in optimizing the performance of spintronic devices ([1] I, Dery H.Taming spin currents[J].Nature materials,2011,10(9):647-648;[2]Ando K,Takahashi S,Ie...

Claims

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Application Information

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IPC IPC(8): H01L43/08H01L43/02H01L43/12
CPCH10N50/80H10N50/10H10N50/01
Inventor 刘二张想张志徐锋张玉晶
Owner NANJING UNIV OF SCI & TECH
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