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Resonant cavity, laser unit, laser and laser radar

A resonant cavity and laser technology, applied in the field of lasers, can solve the problems of increasing the risk of lattice structure defects, reducing external quantum efficiency and power, and reducing device reliability.

Pending Publication Date: 2022-05-27
HESAI TECH CO LTD
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] However, the introduction of strain increases the risk of defects in the lattice structure, resulting in problems of reduced external quantum efficiency and power or reduced device reliability

Method used

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  • Resonant cavity, laser unit, laser and laser radar
  • Resonant cavity, laser unit, laser and laser radar
  • Resonant cavity, laser unit, laser and laser radar

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Embodiment Construction

[0061] It is known from the background art that the introduction of strain into the active region of a VCSEL increases the risk of lattice structure defects. Now combined with the structure of VCSEL to analyze the reasons for the increased risk of lattice structure defects:

[0062] refer to figure 1 , showing a schematic cross-sectional structure of a VCSEL unit.

[0063] The VCSEL laser chip includes a plurality of VCSEL units. like figure 1 As shown, between the upper electrode 15 and the annular lower electrode 16, the device structure of the VCSEL unit includes: a lower DBR 11, an active region 12, a current confinement layer 13 and an upper DBR 14 epitaxially grown on the substrate 10 in sequence . Each epitaxial layer is epitaxial on the substrate 10 (at least one of GaAs substrate, doped Si substrate and doped C substrate) by metal-organic chemical vapor deposition (Metal-Organic Chemical Vapour Deposition, MOCVD) technology growth obtained.

[0064] In each VCSE...

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Abstract

The invention discloses a resonant cavity, a laser unit, a laser and a laser radar. The resonant cavity comprises a first reflecting mirror and a second reflecting mirror which are oppositely arranged at an interval; the active structure is positioned between the first reflecting mirror and the second reflecting mirror; the active structure comprises one or more first active regions and one or more second active regions, the material of the first active regions has tensile strain, and the material of the second active regions has compressive strain. The second active region with compression stress has higher gain and can regulate and control a band gap so as to adjust a working wave band, and the first active region with tensile strain can release the compression stress introduced by the second active region so as to prevent stress accumulation and avoid stress release; through the arrangement of the first active region and the second active region, the gain of the active structure can be ensured, stress balance can be realized, the generation of structural defects can be inhibited, the quality of the resonant cavity can be improved, the external quantum efficiency and power can be improved, and the reliability of the device can be improved.

Description

technical field [0001] The present invention relates to the field of lasers, in particular to a resonant cavity, a laser unit, a laser and a laser radar. Background technique [0002] Lidar is a commonly used ranging sensor, which has the characteristics of long detection distance, high resolution, and little environmental interference. It is widely used in intelligent robots, unmanned aerial vehicles, unmanned driving and other fields. In recent years, with the rapid development of autonomous driving technology, lidar, as the core sensor of its distance perception, has become indispensable. Laser, as one of the core components of lidar, its performance has a great influence on the performance of lidar. [0003] The traditional vertical cavity surface emitting laser (Vertical Cavity Surface Emitting Laser, referred to as VCSEL) usually includes the lower Bragg reflector (Distributed Bragg Reflector, referred to as DBR), active region, current confinement layer and Upper DB...

Claims

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Application Information

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IPC IPC(8): H01S5/183H01S5/20H01S5/323
CPCH01S5/18366H01S5/2013H01S5/32316H01S5/183H01S5/323H01S5/20
Inventor 宣黎阳向少卿
Owner HESAI TECH CO LTD
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