Semiconductor device and preparation method thereof
A semiconductor and device technology, applied in the field of semiconductor devices and their preparation, can solve problems such as reducing gate resistance, affecting device frequency characteristics, increasing gate parasitic capacitance, etc., to reduce gate resistance, increase cross-sectional area, and reduce parasitic The effect of capacitance
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The fabrication process of the semiconductor device shown in FIG. 1 is illustrated as an example. Referring to FIG. 8 and FIG. 9 , the preparation method may specifically include the following steps:
[0089] S11, providing a substrate.
[0090] S12, preparing a multilayer semiconductor layer on one side of the substrate.
[0091] Please refer to the description of the above-mentioned semiconductor device embodiments for the structure of the substrate and the multi-layer semiconductor layer, which will not be repeated here.
[0102] Specifically, the vertical projection of the second sub-trench on the substrate covers the vertical projection of the first sub-trench on the substrate.
[0093] Exemplarily, referring to FIG. 9, the formation process of the gate trench may be to prepare a first dielectric layer first,
[0102] Specifically, the vertical projection of the second sub-trench on the substrate covers the vertical projection of the first sub-trench on the substrate.
[0095...
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