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Stretchable organic electrochemical transistor and preparation method thereof

A transistor and chemical technology, applied in the field of stretchable organic electrochemical transistors and its preparation, can solve problems such as unsatisfactory output current and gate voltage drop, and achieve the goal of improving interface contact, increasing capacitance, and realizing low-voltage operation Effect

Active Publication Date: 2022-06-03
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is: how to provide a stretchable organic electrochemical transistor based on PEDOT:PSS gate electrode modification layer and its preparation method, aiming to solve the problem that the gate voltage cannot be very low due to the too small gate capacitance in the electrochemical transistor. A large portion drops at the channel, resulting in a non-ideal output current situation

Method used

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  • Stretchable organic electrochemical transistor and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] Example 1 (control group):

[0041] 1. Clean the transparent glass substrate with a surface roughness of less than 1nm, and dry it in an incubator for more than 6 hours after cleaning;

[0042] 2. Coat a layer of detergent on the glass substrate, pour the PU on the glass substrate coated with detergent, vibrate slightly, spread the solution, and place it in a vacuum drying oven to dry (30°C, 12h), carefully peel off the flexible substrate from the glass substrate with a blade after drying;

[0043] 3. Spray the electrode (80-150nm) of carbon paste on the PU substrate;

[0044] 4. Clean the microscope slides with surface roughness less than 1nm, and dry them in an incubator for more than 6 hours after cleaning;

[0045]5. Spin-coat the prepared PVA solution on a microscope slide (3000rpm, 60s), and dry the spin-coated slide (110°C, 2min) to obtain a PVA sacrificial layer;

[0046] 6. Spin-coat the prepared P3HT mixed solution (P3HT:SEBS=2:1) ​​onto the PVA sacrificial...

Embodiment 2

[0052] 1. Clean the transparent glass substrate with a surface roughness of less than 1nm, and dry it in an incubator for more than 6 hours after cleaning;

[0053] 2. Coat a layer of detergent on the glass substrate, pour the PU on the glass substrate coated with detergent, vibrate slightly, spread the solution, and place it in a vacuum drying oven to dry (30°C, 12h), carefully peel off the flexible substrate from the glass substrate with a blade after drying;

[0054] 3. Spray the electrode of carbon paste (80-150nm) on the PU substrate;

[0055] 4. A layer of PEDOT:PSS electrode modification layer is dripped on the gate electrode sprayed with carbon paste, and the device on which the PEDOT:PSS gate electrode modification layer is dripped is dried (30°C, 30min);

[0056] 5. Clean the microscope slides with surface roughness less than 1nm, and dry them in an incubator for more than 6 hours after cleaning;

[0057] 6. Spin-coat the prepared PVA solution on a microscope slide...

Embodiment 3

[0064] 1. Clean the transparent glass substrate with a surface roughness of less than 1nm, and dry it in an incubator for more than 6 hours after cleaning;

[0065] 2. Coat a layer of detergent on the glass substrate, pour the PU on the glass substrate coated with detergent, vibrate slightly, spread the solution, and place it in a vacuum drying oven to dry (30°C, 12h), carefully peel off the flexible substrate from the glass substrate with a blade after drying;

[0066] 3. Spray the electrode of carbon paste (80-150nm) on the PU substrate;

[0067] 4. A layer of PEDOT:PSS electrode modification layer is dripped on the gate electrode sprayed with carbon paste, and the device on which the PEDOT:PSS gate electrode modification layer is dripped is dried (30°C, 30min), and the above step 4 is repeated. once;

[0068] 5. Clean the microscope slides with surface roughness less than 1nm, and dry them in an incubator for more than 6 hours after cleaning;

[0069] 6. Spin-coat the pr...

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Abstract

The invention discloses a stretchable organic electrochemical transistor and a preparation method thereof, relates to the technical field of flexible organic electrochemical transistors or flexible electronics, and solves the problem of unsatisfactory output current caused by the fact that a large part of gate voltage cannot be reduced at a channel due to too small gate capacitance in an electrochemical transistor. The electrode sequentially comprises a flexible substrate layer, an electrode layer and an ionic gel electrolyte layer from bottom to top, a semiconductor active layer and a PEDOT: PSS gate electrode modification layer which are mutually independent and are positioned on the same horizontal line are arranged between the electrode layer and the ionic gel electrolyte layer; the PEDOT: PSS gate electrode modification layer is simply dripped between the gate electrode and the ionic gel electrolyte layer, so that the interface contact between the ionic gel electrolyte layer and the gate electrode is effectively improved, the effective control of the input gate voltage on the ions in the electrolyte is realized, the injection of the electrolyte ions into a channel is facilitated, and the performance of the device is improved. Ion-electron capacitance coupling in the channel is enhanced, and the power consumption loss of the device is reduced.

Description

technical field [0001] The invention relates to the field of flexible organic electrochemical transistors or flexible electronics, in particular to a stretchable organic electrochemical transistor and a preparation method thereof. Background technique [0002] Organic electrochemical transistors were invented in the 1980s by Wrighton et al. Organic electrochemical transistors tune the conductivity by electrochemically doping the semiconductor through the gate voltage (VG) effectively controlling the electrolyte ion implantation into the semiconductor channel. The source-drain current (ID) is proportional to the number of moving holes or electrons in the channel and can indicate the doping state of the organic semiconductor film. Similar to conventional metal oxide semiconductor field effect transistors and organic thin film field effect transistors, the organic electrochemical transistor controls the current ID (output) through the gate voltage VG (input), so that the organ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/05H01L51/40
CPCH10K71/10H10K71/80H10K10/471H10K10/484H10K77/111Y02E10/549
Inventor 于军胜彭玉洁田镇南高林邓津易刘常健
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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