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Novel photoelectric position sensitive detector based on heterojunction two-dimensional electron gas and preparation method thereof

A two-dimensional electron gas, photoelectric position technology, applied in electrical components, circuits, semiconductor devices, etc., can solve problems such as those still in the experimental research stage, and achieve the effects of novel and unique working principles, simple and controllable preparation methods, and low cost.

Pending Publication Date: 2022-06-07
HANGZHOU INST FOR ADVANCED STUDY UCAS +2
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Problems solved by technology

Most of the common commercial products of photopotential detectors work in the ultraviolet or visible light band, while the devices working in the infrared band are still in the experimental research stage

Method used

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  • Novel photoelectric position sensitive detector based on heterojunction two-dimensional electron gas and preparation method thereof
  • Novel photoelectric position sensitive detector based on heterojunction two-dimensional electron gas and preparation method thereof
  • Novel photoelectric position sensitive detector based on heterojunction two-dimensional electron gas and preparation method thereof

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preparation example Construction

[0034] The present invention further discloses a new photoelectric position-sensitive detector based on a heterojunction two-dimensional electron gas 5 preparation method, by designing and growing CdTe / PbTe heterojunction, so that the interface naturally produces two-dimensional electron gas 5, thereby having a novel lateral photovoltaic effect; Electrodes are deposited on the heterojunction surface to define the photosensitive region, while the electrodes are in ohmic contact with the two-dimensional electron gas 5 at the interface. The present invention comprises the following steps:

[0035] 1) Growth of CdTe / PbTe heterojunctions:

[0036] The use of molecular beam epitaxial (MBE) methods to decontaminate barium fluoride (BaF 2 A thicker PbTe film is grown on the substrate, followed by a thinner Layer of CdTe film, so that the CdTe / PbTe heterojunction is completed.

[0037]2) Preparation of photoelectric bit detectors:

[0038] Lithography of the electrode area, the area othe...

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Abstract

The invention discloses a novel photoelectric position sensitive detector based on heterojunction two-dimensional electron gas and a preparation method thereof, the detector sequentially comprises metal electrodes arranged on four sides, a CdTe layer, a PbTe layer and a BaF2 substrate from top to bottom, the CdTe layer and the PbTe layer form a heterojunction, the two-dimensional electron gas is naturally formed between the interfaces of the CdTe layer and the PbTe layer, and the BaF2 substrate is a BaF2 substrate. And the two-dimensional electron gas is in ohmic contact with the metal electrode. A CdTe / PbTe heterojunction is grown by adopting an MBE method, high-concentration and high-mobility two-dimensional electron gas is naturally generated at an interface of the CdTe / PbTe heterojunction, and due to the physical characteristics of a heterojunction material and the novel lateral photovoltaic effect of the two-dimensional electron gas, the working wavelength of the device exceeds visible light, the working wave band is also very wide, medium and short infrared wave bands can be covered, and the photoelectric conversion efficiency of the device is improved. And the linear responsivity is relatively excellent. The device is simple in structure, simple and controllable in preparation method, low in cost and novel and unique in working principle, the working range covers medium and short infrared bands, and the device has scientific research and practical values.

Description

Technical field [0001] The patent of the present invention belongs to the field of optoelectronic devices, specifically involving a new photoelectric position-sensitive detector based on heterojunction two-dimensional electron gas and a preparation method thereof. Background [0002] Photoelectric position sensitive (bit sensitive) detector is one of the important types of optical sensors, which are based on the lateral photovoltaic effect, which can transmit the spatial position information of the incident spot in the photosensitive region in the form of an electrical signal. When the semiconductor heterojunction or metal / semiconductor Schottky junction is irradiated by the spot, under the diffusion of the photogenerated carrier, the surface of the material will produce a lateral potential difference, which is lateral photovoltaic, the size of which is closely related to the position of the spot. Compared with focal plane array detectors, photoelectric bit detectors are not only...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0336H01L31/109H01L31/18
CPCH01L31/0336H01L31/109H01L31/18H01L31/1864Y02P70/50
Inventor 朱家旗单玉凤朱贺梁新栋吴惠桢邓惠勇戴宁
Owner HANGZHOU INST FOR ADVANCED STUDY UCAS
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