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Texturing method for diamond wire cut polycrystalline silicon wafer, textured silicon wafer and solar cell

A solar cell, diamond wire cutting technology, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of affecting conversion efficiency, increasing cost of precious metals, and difficult removal.

Pending Publication Date: 2022-06-14
BYD CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, although the black silicon process is compatible with the existing wet texturing process, the introduction of precious metals increases the cost virtually, and its subsequent removal is difficult. If it is not handled properly, it is easy to cause metal pollution to the cell, which in turn affects the conversion. efficiency

Method used

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  • Texturing method for diamond wire cut polycrystalline silicon wafer, textured silicon wafer and solar cell

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0044] A vajra wire cutting polycrystalline silicon wafer flocking method, including the following steps:

[0045] (1) Cleaning pretreatment: The diamond wire cutting polycrystalline silicon wafer is first treated with a concentration of 10wt% KOH solution at 85 °C for alkali ejection treatment for 180s, after water washing, then with a mixed solution of hydrofluoric acid and hydrochloric acid for acid cleaning, and then cleaned with deionized water until neutral, and finally dried;

[0046] (2) Oxidation: The polycrystalline silicon wafers after the above cleaning and pretreatment are placed in a chain furnace, nitrogen is introduced at a flow rate of 5L / min, oxygen is passed into at a flow rate of 0.8L / min, and dry oxygen is heated at 800 °C for 20min to form a SiO with a thickness of 40nm 2 Membrane layer;

[0047] (3) Conventional acid fleece: Will bring SiO 2 The film layer of diamond wire cutting polycrystalline silicon wafer is placed in the acid fleece liquid, the acid fle...

Embodiment 2

[0067] A vajra wire cutting polycrystalline silicon wafer flocking method, including the following steps:

[0068] (1) Cleaning pretreatment: the diamond wire cutting polycrystalline silicon wafers are first treated with a koh solution with a concentration of 8wt% at 70 °C for alkali ejection treatment for 150s, washed with water, and then rinsed with a mixed solution of hydrofluoric acid and hydrochloric acid, and then cleaned with deionized water until neutral, and then rinsed with ethanol and dried;

[0069] (2) Oxidation: The polycrystalline silicon wafer after the above cleaning pretreatment is placed in ozone water with a concentration of 25ppm, and the wet oxidation is carried out for 1min to form a SiO with a thickness of about 2-5nm 2 Membrane layer;

[0070] (3) Conventional acid fleece: Will bring SiO 2 The diamond wire cutting polycrystalline silicon wafer of the film layer is placed in a mixed aqueous solution containing hydrofluoric acid and nitric acid, and the acid...

Embodiment 3

[0073] A vajra wire cutting polycrystalline silicon wafer flocking method, the difference with Example 1 is that SiO 2 The thickness of the film layer is 20 nm.

[0074] Measured in the present embodiment 3 obtained reflectivity of 22%, the efficiency of the battery made of the lint wafer Eta is 19.07%.

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Abstract

The invention provides a texturing method for a diamond wire cut polycrystalline silicon wafer, which comprises the following steps: cleaning and pretreating the diamond wire cut polycrystalline silicon wafer, and forming a silicon dioxide film layer on the surface of the diamond wire cut polycrystalline silicon wafer; and performing acid texturing on the diamond wire cut polycrystalline silicon wafer with the silicon dioxide film layer to obtain a textured silicon wafer. The texturing method is simple, high in operability, low in cost and environment-friendly, and a uniform textured structure with low reflectivity can be formed through a conventional acid texturing process after the silicon dioxide film layer is formed. The invention also provides the textured silicon wafer prepared by the texturing method, and a solar cell prepared by the textured silicon wafer.

Description

Technical field [0001] This application belongs to the field of polycrystalline wafer fleece technology, specifically involving a diamond wire cutting polycrystalline wafer fleece method, flannel wafer and solar cell. Background [0002] Solar cell photovoltaic power generation is an important way to solve the global energy crisis and environmental pollution problems, of which nearly 90% use silicon wafer solar cells. In recent years, diamond wire cutting technology has begun to be applied to the cutting production of crystalline silicon wafers, compared with the traditional mortar wire cutting technology, it has the advantages of high cutting rate, high utilization rate of silicon material, environmental protection, low cost, etc., and has gradually become the mainstream technology of silicon wafer cutting. However, the surface damage of diamond wire cutting silicon wafer is small and shallow, the surface reflectivity is high, the conventional acid fleece process is used to trea...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0236H01L31/18
CPCH01L31/02363H01L31/182
Inventor 滕美玲陆先林王楠金婷婷刘鑫
Owner BYD CO LTD