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Method for improving near-infrared fluorescence intensity of bismuth-doped quartz glass

A quartz glass, fluorescence intensity technology, applied in glass molding, glass manufacturing equipment, manufacturing tools, etc., can solve the problems of weak fluorescence intensity, uneven fluorescence peak shape, low luminous efficiency, etc., to increase the number and increase the communication wavelength. range, the effect of promoting near-infrared luminescence

Active Publication Date: 2022-06-17
SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] On the other hand, although the fluorescence bandwidth of bismuth-doped quartz glass is relatively wide, the low luminous efficiency, weak fluorescence intensity, and uneven fluorescence peak shape limit the application of bismuth-related ultra-broadband optical amplifiers and ultra-broadband light sources.

Method used

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  • Method for improving near-infrared fluorescence intensity of bismuth-doped quartz glass
  • Method for improving near-infrared fluorescence intensity of bismuth-doped quartz glass
  • Method for improving near-infrared fluorescence intensity of bismuth-doped quartz glass

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Embodiment 1

[0028] Example 1: (see figure 1 , figure 2 , image 3 and table 1)

[0029] The composition (molar percentage) of the Bi / P co-doped quartz glass in this embodiment is: 0.1Bi 2 O 3 -10P 2 O 5 -89.9SiO 2 .

[0030] The quenching process of Bi / P co-doped quartz glass includes:

[0031] (1) Clean the glass surface with acetone or alcohol first to avoid the introduction of impurities during high temperature heat treatment;

[0032] (2) The bismuth-doped quartz glass is welded on the end face of one side of the pure quartz glass tube. via H 2 / O 2 The oxyhydrogen flame of =1 is heated to the molten state of 1600-1800 ℃;

[0033] (3) The bismuth-doped quartz glass in the molten state is rapidly placed in deionized water at 25°C and completely soaked, and then rapidly quenched;

[0034] (4) The quenched sample is taken out, processed into a predetermined size, polished on both sides, and then cleaned and dried.

[0035] Test results such as figure 1 and figure 2 show...

Embodiment 2

[0036] Example 2: (see figure 1 , figure 2 , image 3 and table 1)

[0037] The composition (molar percentage) of the Bi / P co-doped quartz glass in this embodiment is: 0.1Bi 2 O 3 -10P 2 O 5 -89.9SiO 2 .

[0038] The quenching process of Bi / P co-doped quartz glass includes:

[0039] (1) Clean the glass surface with acetone or alcohol first to avoid the introduction of impurities during high temperature heat treatment;

[0040] (2) The bismuth-doped quartz glass is welded on the end face of one side of the pure quartz glass tube. It is heated to a molten state of 1600-1800 ℃ by a graphite furnace;

[0041] (3) The bismuth-doped quartz glass in the molten state is rapidly placed in deionized water at 25°C and completely soaked, and then rapidly quenched;

[0042] (4) Take out the quenched sample, process it into a predetermined size, polish both sides, and then clean and dry

Embodiment 3

[0043] Example 3: (see figure 1 , figure 2 , image 3 and table 1)

[0044] The composition (molar percentage) of the Bi / P co-doped quartz glass in this embodiment is: 0.1Bi 2 O 3 -10P 2 O- 5 89.9SiO 2 .

[0045] The quenching process of Bi / P co-doped quartz glass includes:

[0046] (1) Clean the glass surface with acetone or alcohol first to avoid the introduction of impurities during high temperature heat treatment;

[0047] (2) The bismuth-doped quartz glass is welded on the end face of one side of the pure quartz glass tube. via H 2 / O 2 The oxyhydrogen flame of =2 is heated to the molten state of 1600-1800 ℃;

[0048] (3) The bismuth-doped quartz glass in the molten state is rapidly placed in deionized water at 25°C and completely soaked, and then rapidly quenched;

[0049] (4) Take out the quenched sample, process it into a predetermined size, polish both sides, and then clean and dry

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Abstract

A method for improving near-infrared fluorescence intensity of bismuth-doped quartz glass comprises the following steps: heating bismuth-doped quartz glass to a molten state of 1600-1700 DEG C through high-temperature heat treatment, and keeping the temperature for 1-10 minutes; quickly putting the melt into different cooling liquids, completely soaking, and quenching; and then taking out the glass, and polishing the quenched glass to obtain the fluorescence-enhanced bismuth-doped quartz glass. The high-temperature heat source comprises a graphite furnace and oxyhydrogen flame. The cooling liquid comprises deionized water, dry ice, liquid nitrogen, liquid helium and the like. The method is favorable for improving the concentration of a bismuth-related active center in the Bi-doped quartz glass, so that the fluorescence intensity of the near-infrared band carried by the bismuth-doped quartz glass is enhanced. The material can be widely applied as a gain medium of a Bi-doped fiber laser and an optical amplifier.

Description

technical field [0001] The invention belongs to the technical field of quartz glass, and in particular relates to a method for increasing the concentration of bismuth-related active centers and increasing the near-infrared fluorescence intensity of bismuth-doped quartz glass by quenching and quenching. Background technique [0002] Rare earth doping (mainly Yb 3+ , Nd 3+ , Pr 3+ , Er 3+ and Tm 3+ etc.) silica fiber is a very effective active medium in the near-infrared region, and is widely used in fiber amplifiers and other fields. However, spectral gaps still exist in the entire optical communication band. The near-infrared fluorescence of Bi-doped glass can cover 1000-1700 nm, and its fluorescence full width at half maximum exceeds 300 nm, which has potential advantages in realizing high-efficiency broadband fiber amplifiers. Since 2005, when Russian scientists first realized laser and amplifying output in Bi-doped fiber, Bi-doped silica fiber has attracted great at...

Claims

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Application Information

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IPC IPC(8): C03C4/12C03B20/00C03B25/00
CPCC03C4/12C03B20/00C03B25/00Y02P40/57
Inventor 焦艳胡丽丽于春雷邵冲云郭梦婷许晓青
Owner SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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