Magnetic memory cell and preparation method thereof, and magnetic memory

Abstract

The invention discloses a preparation method of a magnetic storage unit, and the method comprises the steps: outwards and sequentially arranging a magnetic free layer, an insulating tunnel layer, a magnetic reference layer and a mask layer on the surface of a pre-object of a preset spin orbit moment metal matrix, and obtaining a to-be-etched unit; etching the mask layer, the magnetic reference layer, the insulating tunnel layer and the magnetic free layer to obtain an etched workpiece comprising a columnar epitaxial layer; a protective layer is arranged on the surface of the etched workpiece; carrying out directional oxygen ion treatment on the spin-orbit moment metal matrix preposed object after the protection layer is arranged; performing surface reduction on the peripheral oxide layer; and removing the protective layer above the mask layer of the storage unit preset object to obtain the magnetic storage unit. The problem that in the prior art, the spin orbit moment metal matrix with the target thickness is directly produced, and the thickness uniformity is poor is solved. The invention also provides a magnetic memory unit and a magnetic memory with the above beneficial effects.

Description

technical field [0001] The invention relates to the technical field of storage, in particular to a magnetic storage unit, a preparation method thereof, and a magnetic memory. Background technique [0002] Compared with the traditional STT-MRAM (Spin Transfer Torque Magnetic Random Access Memory), SOT-MRAM (Spin Orbit Torque Magnetic Random Access Memory) not only maintains the excellent characteristics of MRAM such as high speed and low power consumption, but also realizes low writing. Voltage and read and write paths are separated. It is expected to replace STT-MRAM and utilize the spin-orbit moment to achieve fast and reliable magnetization inversion. However, in spin-orbit magnetic memory based on MTJ (magnetic tunnel junction), the free layer is in direct contact with the spin-orbit moment providing wire. However, it should be noted that since the amount of current passing through it will directly control the memory cells on it, the surface flatness of the ultra-thin s...

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a magnetic storage unit and its preparation method, magnetic memory, to solve the problem of poor uniformity of spin-orbit moment metal substrate thickness in the prior art

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