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A kind of cualo 2 A method for improving the efficiency of copper-zinc-tin-sulfur-selenium solar cells with transition layer

A copper-zinc-tin-sulfur-selenium, solar cell technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as side effects, and achieve the effects of improving crystal quality, optimizing thickness, and good repeatability

Inactive Publication Date: 2020-04-24
JILIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, they can still cause some side effects

Method used

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  • A kind of cualo <sub>2</sub> A method for improving the efficiency of copper-zinc-tin-sulfur-selenium solar cells with transition layer
  • A kind of cualo <sub>2</sub> A method for improving the efficiency of copper-zinc-tin-sulfur-selenium solar cells with transition layer
  • A kind of cualo <sub>2</sub> A method for improving the efficiency of copper-zinc-tin-sulfur-selenium solar cells with transition layer

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Embodiment 1

[0035] The present invention uses CuO (99.99%, 200 mesh) powder and Al 2 O 3 (99.999%, 5μm) powder is used as raw material, CuO and Al are prepared according to the atomic ratio of Cu:Al:O=1:1:2 2 O 3 The mixed powder is fully ground and pressed under 52MPa pressure into target embryos with a height and a diameter of 3mm and 70mm, respectively, and then placed in a high-temperature box furnace for calcination at 1200°C for 10 hours, and finally at 5°C / min The temperature is lowered to 600°C at a high rate, and then it is naturally lowered to room temperature to form a CAO target. Using the prepared CAO target material, high-purity Ar (99.999%) as the sputtering gas, the working pressure is 1.0Pa, the sputtering power is 40W, and the substrate temperature is room temperature to grow on the SLG / Mo substrate. CAO amorphous film controls the thickness of CAO film by controlling the growth time.

[0036] CZTSSe solar cells were prepared using SLG / Mo and SLG / Mo / CAO as substrates, respe...

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Abstract

The invention relates to a method for improving the efficiency of a copper-zinc-tin-sulfur-selenium solar cell by using a CuAlO2 transition layer, and belongs to the field of optoelectronic semiconductors and solar cells. The object of the present invention is to add a CuAlO2 (CAO) amorphous film between the CZTSSe solar cell back electrode Mo and a CZTSSe absorption layer of a conventional structure (SLG / Mo / CZTSSe / CdS / i-ZnO / ITO / Al). As shown in Fig. 1, the reaction between Se and Mo in Se vapor and CZTSSe is inhibited during selenization, the thickness of the Mo(S, Se)2 layer is reduced, theformation of the secondary phase is suppressed, and the crystal quality of the CZTSSe is improved, thereby improving the photoelectric conversion efficiency. The method uses the radio frequency magnetron sputtering to prepare the CAO film, and the solution method is used to prepare the CZTSSe film. When the thickness of the CAO layer is 10.6 nm, the solar cell conversion efficiency can be increased by 24%.

Description

Technical field [0001] The invention relates to an application of CuAlO 2 A method for improving the photoelectric conversion efficiency of copper, zinc, tin, sulfur, and selenium solar cells by modifying the interface of the back electrode with an amorphous film belongs to the field of optoelectronic semiconductors and solar cells. Background technique [0002] Copper Zinc Tin Sulfide Selenide (CZTSSe) with a kesterite structure is a direct band gap semiconductor material. Because its band gap is continuously adjustable at 1.0-1.5 eV, the absorption coefficient is high (α> 10 4 cm -1 ), the earth's constituent elements are rich in storage, the preparation cost is low, and the environment is friendly. It is considered to replace CuInGaSe 2 (CIGS) The ideal absorber layer material for preparing thin-film solar cells has been extensively and deeply studied in recent years [1-3] . Up to now, the photoelectric conversion efficiency (PCE) of thin film solar cells with CZTSSe as the ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01L21/02H01L31/032
CPCH01L21/02425H01L21/02565H01L21/02631H01L31/0322H01L31/18Y02E10/541Y02P70/50
Inventor 姚斌宋燕平李永峰刘瑞健丁战辉
Owner JILIN UNIV