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Method for improving efficiency of copper-zinc-tin-sulfur-selenium solar cells by using CuAlO2 transition layer

A copper-zinc-tin-sulfur-selenium, solar cell technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as side effects, and achieve the effects of improving crystal quality, simple preparation process, and good repeatability

Inactive Publication Date: 2019-02-22
JILIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, they can still cause some side effects

Method used

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  • Method for improving efficiency of copper-zinc-tin-sulfur-selenium solar cells by using CuAlO2 transition layer
  • Method for improving efficiency of copper-zinc-tin-sulfur-selenium solar cells by using CuAlO2 transition layer
  • Method for improving efficiency of copper-zinc-tin-sulfur-selenium solar cells by using CuAlO2 transition layer

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Embodiment 1

[0035] The present invention uses CuO (99.99%, 200 mesh) powder and Al 2 o 3 (99.999%, 5μm) powder as raw material, CuO and Al were prepared according to the atomic ratio of Cu:Al:O=1:1:2 2 o 3 The mixed powder is fully ground and pressed under a pressure of 52MPa to form a target body with a height of 3mm and a diameter of 70mm, and then put it into a high-temperature box furnace for calcination at 1200°C for 10h, and finally cool down at a rate of 5°C / min to 600°C, and then naturally lowered to room temperature to make a CAO target. Using the prepared CAO target material, high-purity Ar (99.999%) as the sputtering gas, under the conditions of working pressure of 1.0Pa, sputtering power of 40W, and substrate temperature of room temperature, it was grown on the SLG / Mo substrate The CAO amorphous film can regulate the thickness of the CAO film by controlling the growth time.

[0036] CZTSSe solar cells were prepared on SLG / Mo and SLG / Mo / CAO substrates respectively, where th...

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Abstract

The invention relates to a method for improving the efficiency of a copper-zinc-tin-sulfur-selenium solar cell by using a CuAlO2 transition layer, and belongs to the field of optoelectronic semiconductors and solar cells. The object of the present invention is to add a CuAlO2 (CAO) amorphous film between the CZTSSe solar cell back electrode Mo and a CZTSSe absorption layer of a conventional structure (SLG / Mo / CZTSSe / CdS / i-ZnO / ITO / Al). As shown in Fig. 1, the reaction between Se and Mo in Se vapor and CZTSSe is inhibited during selenization, the thickness of the Mo(S, Se)2 layer is reduced, theformation of the secondary phase is suppressed, and the crystal quality of the CZTSSe is improved, thereby improving the photoelectric conversion efficiency. The method uses the radio frequency magnetron sputtering to prepare the CAO film, and the solution method is used to prepare the CZTSSe film. When the thickness of the CAO layer is 10.6 nm, the solar cell conversion efficiency can be increased by 24%.

Description

technical field [0001] The present invention relates to a kind of application CuAlO 2 The invention discloses a method for improving the photoelectric conversion efficiency of a copper-zinc-tin-sulfur-selenium solar cell by modifying the interface of a back electrode with an amorphous film, and belongs to the field of optoelectronic semiconductors and solar cells. Background technique [0002] Copper Zinc Tin Sulfide Selenide (CZTSSe) with a kesterite structure is a semiconductor material with a direct band gap, and its absorption coefficient is high (α>10 4 cm -1 ), the composition elements are abundant in the earth, the preparation cost is low and the environment is friendly, and it is considered to be a substitute for CuInGaSe 2 (CIGS) is an ideal absorber material for thin-film solar cells, which has been extensively and in-depth researched in recent years. [1-3] . Up to now, the photoelectric conversion efficiency (Power Conversion Efficiency, PCE) of CZTSSe as t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L21/02H01L31/032
CPCH01L21/02425H01L21/02565H01L21/02631H01L31/0322H01L31/18Y02E10/541Y02P70/50
Inventor 姚斌宋燕平李永峰刘瑞健丁战辉
Owner JILIN UNIV
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