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SiC module with low parasitic inductance and high heat dissipation performance and manufacturing process

A technology with low parasitic inductance and manufacturing process, applied in circuits, electric vehicles, electrical components, etc., can solve the problems of high cost, unsuitable for promotion and application, complex process flow, etc., and achieve low parasitic inductance, easy production, and high heat dissipation performance. Effect

Pending Publication Date: 2022-07-08
XI AN JIAOTONG UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, these methods are not only more complicated in process, but also cost higher, so they are not suitable for popularization and application.

Method used

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  • SiC module with low parasitic inductance and high heat dissipation performance and manufacturing process
  • SiC module with low parasitic inductance and high heat dissipation performance and manufacturing process
  • SiC module with low parasitic inductance and high heat dissipation performance and manufacturing process

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Embodiment Construction

[0042] The present invention will be further described in detail below with reference to specific embodiments, which are to explain rather than limit the present invention.

[0043] refer to figure 1 , In the traditional 62mm package structure, the parasitic inductance introduced by the bonding wire process is large, resulting in extremely serious voltage overshoot and oscillation of SiC devices during high-speed switching; traditional substrates, namely Direct Bond Copper (DBC) The ceramic layer in the use of Al 2 O 3 material, its thermal conductivity is low, which makes SiC devices generate serious heat due to poor heat dissipation performance under high frequency conditions.

[0044] The invention discloses a SiC module with low parasitic inductance and high heat dissipation performance. figure 2 , 3 , 4, including the casing 17 and the metal base plate 5, DBC board 18, PCB drive board 19 and silicon carbide components stacked from bottom to top, the metal base plate ...

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PUM

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Abstract

The invention relates to the technical field of power electronic device packaging integration, in particular to a SiC module with low parasitic inductance and high heat dissipation performance and a manufacturing process, the SiC module comprises a shell, and a metal bottom plate, a DBC board, a PCB driving board and a silicon carbide element which are stacked from bottom to top, and the metal bottom plate, the DBC board, the PCB driving board and the silicon carbide element are all arranged in the shell; the DBC board comprises two copper layers and an AlN layer, the AlN layer is located between the two copper layers, the silicon carbide element, the copper layers and the PCB driving board are electrically connected, and a plurality of power terminals are arranged on the DBC board. The overall parasitic inductance of the module can be greatly reduced by adjusting the overall layout of the module, and the overall heat dissipation capacity of the module is enhanced by replacing a ceramic material in the DBC board.

Description

technical field [0001] The invention relates to the technical field of packaging and integration of power electronic devices, in particular to a SiC module with low parasitic inductance and high heat dissipation performance and a manufacturing process. Background technique [0002] The third-generation power semiconductor devices dominated by silicon carbide (Silicon Carbon, SiC) devices are developing rapidly. Compared with traditional silicon devices, SiC devices have many excellent characteristics such as small on-resistance, small parasitic capacitance, high maximum switching frequency and maximum operating junction temperature. Therefore, SiC devices have great potential and broad development prospects in many applications such as charging piles and motor drive systems for electric vehicles, photovoltaic inverters, multi-electric aircraft, ship power systems, and DC circuit breakers in power grids. [0003] In the manufacturing process of SiC devices, in order to impro...

Claims

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Application Information

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IPC IPC(8): H01L23/373H01L23/49H01L21/60
CPCH01L23/3738H01L23/49H01L24/80H01L2224/80Y02T90/14
Inventor 王来利吴世杰赵成温浚铎杨俊辉聂延甘永梅
Owner XI AN JIAOTONG UNIV