Preparation method of low-cost inclined-angle-controllable inclined-table-board nickel oxide/gallium oxide heterojunction power diode
A technology of power diodes and gallium oxide, which is applied in sustainable manufacturing/processing, semiconductor/solid-state device manufacturing, climate sustainability, etc., can solve the problems of difficult to effectively control the tilt angle and high process cost, and achieve low cost and simple process , Increase the effect of breakdown voltage
Pending Publication Date: 2022-07-12
NANJING UNIV
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[0004] In view of the shortcomings of the prior art described above, the object of the present invention is to provide a low-cost, controllable tilt-angle tilt-mesa nickel oxide / gallium oxide heterojunction power diode preparation method, which is used to solve the high cost of the traditional tilt-mesa technology , the problem that the tilt angle is difficult to control effectively
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[0026] The embodiments of the present invention will be described in further detail below with reference to the accompanying drawings. Obviously, the described embodiments are only some, but not all, embodiments of the present invention. The described embodiments are for illustration only, and are not intended to limit the scope of the invention. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative work fall within the protection scope of the present invention.
[0027] specific, figure 1 A schematic diagram of the fabrication process of a low-cost, controllable tilt angle mesa NiO / GaO heterojunction power diode is shown.
[0028] A preparation method of a low-cost, controllable inclination angle inclined mesa nickel oxide / gallium oxide heterojunction power diode, comprising the following steps:
[0029] S1, providing a gallium oxide single crystal wafer with a low-doped gallium oxide drift ...
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Abstract
The invention discloses a preparation method of a low-cost inclined-angle-controllable inclined-table-board nickel oxide / gallium oxide heterojunction power diode, and the method comprises the steps: carrying out the magnetron sputtering of nickel oxide at a hollow part of a hard mask, and obtaining a nickel oxide / gallium oxide heterogeneous PN structure from top to bottom; a nickel oxide table board with an inclination angle can be obtained by adjusting the incidence angle of the magnetron sputtering nickel oxide target and the gallium oxide wafer, and the inclination angle of the table board is in positive correlation with the incidence angle. Compared with a method for preparing a nickel oxide pattern through photoetching, the method for preparing the nickel oxide pattern through the hard mask is simple in process and low in cost, the inclination angle of a nickel oxide inclined table top can be freely controlled, meanwhile, the breakdown voltage of the device is increased through the design of the inclined table top, and the method has important significance on large-scale application of high-voltage-resistant and large-current gallium oxide power devices.
Description
technical field [0001] The invention relates to the field of semiconductor power device manufacturing, in particular to a low-cost, controllable tilt angle inclined mesa nickel oxide / gallium oxide heterojunction power diode preparation method. Background technique [0002] Ultra-wide bandgap semiconductor gallium oxide (Ga 2 O 3 ) due to its large forbidden band width (4.5-4.9 eV), high critical breakdown field strength (8MV / cm), large substrate size, low production cost, and controllable epitaxial doping. Therefore, it has broad prospects in the field of ultra-high voltage power electronic devices, especially in civil and military fields such as ultra-high voltage power transmission, industrial control, new energy electric vehicles, weapon equipment and aerospace. [0003] However, gallium oxide also faces many technical challenges. Gallium oxide has the key bottleneck problem of difficult p-type doping, which makes the traditional bipolar power device design unable to be...
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IPC IPC(8): H01L29/267H01L21/34H01L29/861
CPCH01L29/267H01L29/66969H01L29/861Y02P70/50
Inventor 叶建东巩贺贺任芳芳朱顺明吕元杰冯志红顾书林张荣
Owner NANJING UNIV