Method for testing abnormal change of switch response of silicon carbide vertical double-diffused transistor after total dose ionizing radiation

Abstract

The invention relates to a method for testing abnormal change of switch response of a silicon carbide vertical double-diffused transistor after total dose ionizing radiation, and a device designed by the method consists of an electrostatic test platform, a sample test board, a pulse generator, a high-voltage power supply, an oscilloscope and a computer. A high-voltage probe on an oscilloscope is utilized to accurately and quickly measure the switch response time of the silicon carbide vertical double-diffused transistor within a certain time under a certain temperature condition, and a grid electrode of the transistor needs to be connected with a pulse generator during measurement; the method comprises the following steps of: firstly, generating a signal with a preset period, pulse width, high-level voltage and low-level voltage by using a pulse generator, comparing transistor switching responses obtained by testing before and after irradiation by using a computer according to parameters of switching time of an MIL-STD-750 / 3472 standard measurement device, generating a degradation difference value of the switching responses caused by the irradiation, and setting a reasonable pre-value, so as to obtain a high-level voltage signal and a low-level voltage signal; and if the degradation difference value is greater than the pre-value, the abnormal condition of the device switch response can be quickly judged according to the data accumulated in the experiment. The method is convenient and fast to operate and has certain universality.

Description

technical field [0001] The invention relates to the technical field of power device testing, in particular to a testing method for abnormal changes in the switching response of a silicon carbide vertical double-diffusion transistor after total dose ionizing radiation. Background technique [0002] In recent years, silicon carbide power field effect transistors (VDMOS) can further improve the efficiency and power density of power electronic systems in high temperature environments due to their excellent material properties. It is widely used in the field of aerospace and has great application prospects. The reliability of its space application has an important impact on the on-orbit performance and operating life of the space station. [0003] Compared with the ordinary planar transistor (MOS) structure, the SiC vertical double-diffusion transistor mainly adopts the vertical double-diffusion structure, and has more parasitic capacitance structures. After irradiation, the par...

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Problems solved by technology

[0006] The purpose of the present invention is to provide a silicon carbide vertical double-diffused transistor switch after the total dose of ionizing radiation to solve the problem that the abnormal switch response of the silicon carbide vertical double-diffused transistor cannot be accurately judged whether it seriously affects the dynamic performance of the device after being irradiated. A test method that responds to abnormal changes. The design device of this method is composed of an electrostatic test platform, a sample test plate, a pulse generator, a high-voltage power supply, an oscilloscope, and a computer. To measure the switching response time of the silicon carbide vertical double-diffused transistor, the gate of the transistor needs to be connected to the pulse generator; then the pulse generator sends out a signal with a preset period, pulse width, high voltage, and low voltage, and then according to The MIL-STD-750 / 3472 standard measures the parameters of the switching time of the device, and compares the transistor switching response obtained before and after the irradiation by the computer to generate the degradation difference of the switching response caused by the irradiation, and then set a reasonable pre-value. If the degradation difference is greater than the preset value, it will quickly judge the abnormality of the device switching response based on the data accumulated in the experiment

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