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Interface optimization method of cadmium sulfide semiconductor film and application of interface optimization method

An interface optimization and semiconductor technology, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as the inability to accurately control the combination of S elements and Cd elements, the CdS growth process, the low photoelectric efficiency of CdS, and the enhancement of CdS photocorrosion. Excellent photoelectric properties, low equipment requirements, and the effect of eliminating defects and impurity phases

Pending Publication Date: 2022-07-29
NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the inability to accurately control the combination of S elements and Cd elements and the growth process of CdS during the deposition process, a large number of defects are generated on the surface of CdS.
These defects can trap the photogenerated electron-holes of CdS, and the photogenerated holes induce the surface lattice S of CdS 2- for S 0 / or SO 4 2- , leading to a change in its surface structure, resulting in low photoelectric efficiency of CdS
At the same time, under aerobic conditions, the surface of CdS will initiate a redox reaction, which will cause the decomposition of CdS, enhance the photocorrosion of CdS, and reduce the stability of CdS.

Method used

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  • Interface optimization method of cadmium sulfide semiconductor film and application of interface optimization method
  • Interface optimization method of cadmium sulfide semiconductor film and application of interface optimization method
  • Interface optimization method of cadmium sulfide semiconductor film and application of interface optimization method

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Effect test

Embodiment 1

[0055] 1. Wash and dry the cadmium sulfide semiconductor thin film prepared by the chemical water bath method, then place it in an annealing tube, start the reaction device in an air atmosphere, heat it up to 500°C, and maintain this temperature for heat treatment for 60min.

[0056] 2. Place the heat-treated cadmium sulfide semiconductor film in 0.2MNa 2 SO 3 The solution was stirred for 120 min, washed with deionized water for 120 s, dried in 0.2M Na 2 SO 3 In the solution, the test is carried out under visible light and when the voltage is 0Vvs.Ag / AgCl, that is, photoelectric oxidation is carried out at the same time, and finally a cadmium sulfide semiconductor film with an ideal surface is obtained.

[0057] After the reaction is completed, the cadmium sulfide semiconductor thin film obtained by the method has uniform interface composition, uniform morphology, and good crystalline properties and optoelectronic properties.

[0058] The cadmium sulfide semiconductor thin ...

Embodiment 2

[0062] 1. Wash and dry the cadmium sulfide semiconductor thin film prepared by chemical water bath method and place it in 0.01MNa 2 SO 3 The solution was stirred for 30 min, washed with deionized water for 10 s, and dried for later use.

[0063] 2. Place the cadmium sulfide semiconductor film obtained in step 1 in an annealing tube, start the reaction device in the air, heat up to 500° C., and maintain this temperature for heat treatment for 60 minutes. After heat treatment, the cadmium sulfide semiconductor thin film was deposited in 0.2MNa 2 SO 3 In the solution, the test is carried out under visible light and when the voltage is 0Vvs.Ag / AgCl, that is, photoelectric oxidation is carried out at the same time, and finally the optimized cadmium sulfide semiconductor film is obtained.

[0064] The photoelectric response diagrams of the cadmium sulfide semiconductor thin film before and after optimization are shown in Fig. image 3 As shown in the figure, the light source was...

Embodiment 3

[0066] 1. Wash and dry the cadmium sulfide semiconductor thin film prepared by the chemical water bath method and place it in 1MNa 2 SO 3 The solution was allowed to stand for 1440 min, then washed with deionized water for 10 s, and dried for later use.

[0067] 2. Place the cadmium sulfide semiconductor film obtained in step 1 in an annealing tube, start the reaction device in the air, heat up to 500° C., and maintain this temperature for heat treatment for 60 minutes. After heat treatment, the cadmium sulfide semiconductor thin film was deposited in 0.2MNa 2 SO 3 In the solution, the test is carried out under visible light and when the voltage is 0Vvs.Ag / AgCl, that is, photoelectric oxidation is carried out at the same time, and finally the optimized cadmium sulfide semiconductor film is obtained.

[0068] The photoelectric response diagrams of the cadmium sulfide semiconductor thin film before and after optimization are shown in Fig. image 3 As shown in the figure, the...

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Abstract

The invention discloses an interface optimization method of a cadmium sulfide semiconductor film and application of the interface optimization method. The interface optimization method of the cadmium sulfide semiconductor thin film comprises the following steps: fully infiltrating the cadmium sulfide semiconductor thin film in a solution containing sulfite ions and then carrying out heat treatment, or firstly carrying out heat treatment on the cadmium sulfide semiconductor thin film and then fully infiltrating the cadmium sulfide semiconductor thin film in the solution containing sulfite ions; and performing photoelectric oxidation treatment on the obtained cadmium sulfide semiconductor film in a solution containing sulfite ions to obtain the cadmium sulfide semiconductor film after interface optimization. According to the interface optimization method of the cadmium sulfide semiconductor film, defects and impure phases on the surface of the cadmium sulfide semiconductor film can be effectively eliminated, and the obtained cadmium sulfide semiconductor film has a proper thickness and an ideal surface, so that the optimal photoelectric property can be obtained.

Description

technical field [0001] The invention belongs to the technical field of new energy sources of photoelectric materials, and in particular relates to an interface optimization method of a cadmium sulfide semiconductor thin film and its application. Background technique [0002] Nowadays, the rapid development of industrialization and urbanization leads to a global energy shortage, and a large amount of toxic and harmful chemical pollutants are released into the environment, so we urgently need to find a new green technology to solve the above-mentioned energy and environmental crises. Solar energy is the most abundant and clean energy source, and solar cells or artificial photosynthesis systems that convert solar energy into electrical energy or chemical fuels have considerable potential. [0003] In the field of solar cells, CdS is widely used in CdTe, Cu(In,Ga)S due to its good electron mobility, suitable optical band gap and low temperature preparation conditions and low cos...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/0296
CPCH01L31/02963H01L31/1828
Inventor 况永波汪颖
Owner NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI