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Epitaxial wafer, epitaxial wafer preparation method and light emitting diode

An epitaxial wafer and quantum technology, applied in the semiconductor field, can solve the problem of low carrier mobility, achieve the effect of improving mobility and reducing the average C impurity concentration

Pending Publication Date: 2022-07-29
JIANGXI ZHAO CHI SEMICON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of this, the object of the present invention is to provide an epitaxial wafer, a preparation method of the epitaxial wafer and a light-emitting diode, aiming at solving the problem of low carrier mobility of the epitaxial wafer in the prior art

Method used

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  • Epitaxial wafer, epitaxial wafer preparation method and light emitting diode
  • Epitaxial wafer, epitaxial wafer preparation method and light emitting diode
  • Epitaxial wafer, epitaxial wafer preparation method and light emitting diode

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Embodiment 1

[0037] see Figure 1 to Figure 3 , shows the epitaxial wafer proposed in the first embodiment of the present invention, and the epitaxial wafer includes:

[0038]Substrate 10, buffer layer 20 epitaxially grown on the substrate in sequence, undoped AlGaN layer 30, N-type doped AlGaN layer 40, multiple quantum well layer 50, electron blocking layer 60, P-type doped GaN layer 70 and the contact layer 80 .

[0039] Preferably, in this embodiment, the buffer layer 20 is an AlN layer, and the contact layer 80 is an AlGaN layer.

[0040] The multiple quantum well layer includes quantum well layers and quantum barrier layers that are alternately stacked periodically, wherein the number of periods can be set according to the actual situation, which is not limited here. figure 1 As shown, the number of periods is 2. Specifically, the quantum well layer 51 includes a first quantum well sublayer 510, a second quantum well sublayer 511 and a third quantum well sublayer 512 that are stack...

Embodiment 2

[0046] see Figure 4 , is the epitaxial wafer preparation method proposed in the second embodiment of the present invention, the epitaxial wafer preparation method is used to prepare the epitaxial wafer proposed in the above-mentioned first embodiment, and the epitaxial wafer preparation method includes steps S10 to S13 .

[0047] Step S10, providing a substrate.

[0048] Specifically, in this embodiment, the substrate is a sapphire substrate.

[0049] In step S11, a buffer layer, an undoped AlGaN layer, and an N-type doped AlGaN layer are sequentially epitaxially grown on the substrate.

[0050] Specifically, PVD is used to grow the buffer layer on the substrate, wherein the growth temperature is 400-650°C, the sputtering power is 2000-4000W, the growth pressure is 1-10torr, and the growth thickness is 15-50nm; the buffer layer is in MOCVD In-situ annealing treatment is performed in a hydrogen atmosphere, the annealing temperature is 1000°C-1200°C, the annealing pressure is...

Embodiment 3

[0059] The light emitting diode proposed in the third embodiment of the present invention includes the epitaxial wafer in the above-mentioned first embodiment, and the epitaxial wafer is prepared by the method for preparing an epitaxial wafer in the above-mentioned second embodiment.

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Abstract

The invention provides an epitaxial wafer, an epitaxial wafer preparation method and a light emitting diode, the epitaxial wafer comprises a multi-quantum well layer, the multi-quantum well layer comprises quantum well layers and quantum barrier layers, and the quantum well layers and the quantum barrier layers are periodically and alternately stacked; wherein the quantum well layer comprises a first quantum well sub-layer, a second quantum well sub-layer and a third quantum well sub-layer which are sequentially stacked, and the quantum barrier layer comprises a first quantum barrier sub-layer and a second quantum barrier sub-layer which are periodically stacked on the third quantum well sub-layer. The first quantum well sub-layer, the third quantum well sub-layer and the second quantum barrier sub-layer are grown by adopting a TMGa source, the second quantum well sub-layer is grown by adopting a TEGa source, and the first quantum barrier sub-layer is grown by adopting a TEGa source. According to the invention, the problem of low carrier mobility of the epitaxial wafer in the prior art is solved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an epitaxial wafer, a method for preparing the epitaxial wafer and a light emitting diode. Background technique [0002] In the past ten years, AlGaN materials have attracted much attention due to their huge application potential in ultraviolet optoelectronic devices. Ultraviolet LEDs have the characteristics of high photon energy, short wavelength, small size, low power consumption, long life, and environmental friendliness. Color rendering index white light lighting, high-density optical data storage, sensors, lithography, air purification, environmental protection and other fields have a wide range of applications. [0003] However, the development of AlGaN-based UV LEDs faces many technical difficulties. For example, in the selection of Ga source, the quantum wells and quantum barriers in the multiple quantum wells of AlGaN-based UV LEDs are usually trimethylgallium (T...

Claims

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Application Information

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IPC IPC(8): H01L33/06C30B25/02C30B29/40H01L33/00H01L33/14H01L33/32
CPCH01L33/007H01L33/06H01L33/145H01L33/325C30B29/403C30B29/406C30B25/02
Inventor 刘春杨胡加辉吕蒙普金从龙
Owner JIANGXI ZHAO CHI SEMICON CO LTD
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