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High-speed communication low-dielectric substrate for millimeter waves

A high-speed communication, low-dielectric technology, applied in circuit substrate materials, printed circuits, circuit devices, etc., can solve the problems of decreased strength, increased strain, and has not been practically applied, and achieves stable quality and reduced characteristic differences. Effect

Pending Publication Date: 2022-07-29
SHIN ETSU CHEM CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0014] There is no precedent for reducing the OH group to a specified amount by high temperature treatment to increase the loss factor
In addition, when quartz glass and silica powder are heated at high temperature, the amount of strain increases, especially the strain on the glass surface increases (Non-Patent Document 2), so the strength decreases significantly
Therefore, no practical application

Method used

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  • High-speed communication low-dielectric substrate for millimeter waves
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  • High-speed communication low-dielectric substrate for millimeter waves

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0137] Hereinafter, although an Example and a comparative example are used and this invention is demonstrated concretely, this invention is not limited to these.

[0138] In addition, the measurement of the following characteristic values ​​(tensile strength, loss factor (tan δ), dielectric constant, average particle diameter) was performed according to the following methods unless otherwise specified.

[0139] 1. Determination of tensile strength

[0140] Measured in accordance with "7.4 Tensile Strength" in Japanese JIS R3420:2013 "General Test Methods for Glass Fibers".

[0141] 2. Determination of loss factor

[0142] 2.1 Glass cloth, organic resin, resin substrate

[0143] Unless otherwise specified, a network analyzer (manufactured by Keysight Technologies, E5063A) was connected to an SPDR resonator (split column dielectric resonator), and the loss factor of the sample at a frequency of 10 GHz was measured.

[0144] 2.2 Silica powder

[0145] (1) A varnish was prepar...

preparation example 1

[0157] (Production Example 1: Production Example of Quartz Glass Cloth (SG1))

[0158] Quartz glass filaments were stretched at a high temperature and simultaneously coated with a sizing agent for quartz glass fibers, thereby producing a quartz glass strand consisting of 200 quartz glass filaments having a diameter of 7.0 μm. Next, the obtained quartz glass strand was twisted 0.2 times per 25 mm to prepare a quartz glass yarn.

[0159] The obtained quartz glass yarn was loaded into an air-jet loom, and a plain-woven quartz glass cloth having a warp density of 60 threads / 25 mm and a weft density of 58 threads / 25 mm was woven. The thickness of the quartz glass cloth is 0.0086mm, and the weight per unit area of ​​the cloth is 85.5g / m 2 .

[0160] This quartz glass cloth was heat-treated at 400° C. for 10 hours to remove the fiber sizing agent. In addition, the quartz glass cloth with a width of 1.3 m and a length of 2000 m produced in Preparation Example 1 was referred to as S...

preparation example 2

[0161] (Production Example 2: Production Example of (SG2))

[0162] The quartz glass cloth with a width of 1.3 m and a length of 2000 m produced in Preparation Example 1 was placed in an electric furnace set at 700° C. and heated for 5 hours. After heating, it was cooled to room temperature over 8 hours.

[0163] Next, the above-mentioned quartz glass cloth was immersed in alkaline electrolyzed water of pH 13 heated to 40° C. for 48 hours to perform etching treatment. After etching, it was washed with ion-exchanged water and dried to produce a low-dielectric and high-strength quartz glass cloth (SG2). The dielectric constant of the quartz glass cloth SG2 was 3.3, the loss factor was 0.0002 and the tensile strength was 105N / 25mm.

[0164] (Metal impurities contained in the quartz glass cloths manufactured in Preparation Examples 1 to 2 and treatment with a silane coupling agent)

[0165] The alkali metals in the quartz glass cloths of SG1 and SG2 were both 0.5 ppm, P (phosph...

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Abstract

Provided is a high-speed communication low-dielectric substrate for millimeter waves, which comprises a quartz glass cloth and a low-dielectric resin, and which is capable of transmitting stable and high-quality signals without a transmission time difference between lines even if the distribution of the resin or the quartz glass cloth above and below the lines of the substrate is uneven. And moreover, the loss factor difference caused by components is reduced, and the transmission loss is reduced. The high-speed communication low-dielectric substrate for millimeter waves comprises a quartz glass cloth and an organic resin, and is characterized in that the loss factor of the quartz glass cloth is 0.0001-0.0015 at 10 GHz and the dielectric constant is 3.0-3.8 at 10 GHz, the loss factor of the organic resin is in the range of 80%-150% of the loss factor of the quartz glass cloth at 10 GHz, and the dielectric constant of the organic resin is 3.0-3.8 at 10 GHz. The dielectric constant of the organic resin is in the range of 50%-110% of the dielectric constant of the quartz glass cloth.

Description

technical field [0001] The present invention relates to a high-speed communication low-dielectric substrate for millimeter waves, which is a substrate comprising a quartz glass cloth and an organic resin with low-dielectric properties. Background technique [0002] Nowadays, with high-speed communication such as 5G, there is a strong demand for high-speed communication substrates and antenna substrates that have less transmission loss and propagation delay difference (skew) even when high frequencies such as millimeter waves are used. In addition, in the field of information terminals such as smart phones, high-density mounting and ultra-thinning of circuit boards have been significantly developed. [0003] Especially for high-speed substrates greater than 25 GHz, it is gradually difficult to ensure signal quality by extending existing technologies. [0004] In order to cooperate with high-speed communication such as 5G, laminates formed by laminating prepregs and curing th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H05K1/03
CPCH05K1/0306H05K1/0313H05K1/0366H05K2201/029H05K2201/0209H05K2201/015C08J5/043C08J5/10C08L27/18C08K3/36C08K2201/005H05K1/024H05K1/0248H05K2201/0175H05K2201/0195
Inventor 盐原利夫田口雄亮野村龙之介
Owner SHIN ETSU CHEM CO LTD