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Silicon carbide super-structure surface for high-gain ultraviolet photoelectric detector and preparation method of silicon carbide super-structure surface

A metasurface, electrical detector technology, applied in circuits, electrical components, nano-optics, etc., can solve the problem of limited improvement of grating structure, and achieve the effect of improving the intensity of photocurrent

Pending Publication Date: 2022-08-09
JIANGNAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the extent to which the grating structure can improve the absorption of ultraviolet light is limited. How to improve the absorption of ultraviolet light by silicon carbide more effectively has become the key to improving the sensitivity of silicon carbide ultraviolet photodetectors.

Method used

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  • Silicon carbide super-structure surface for high-gain ultraviolet photoelectric detector and preparation method of silicon carbide super-structure surface
  • Silicon carbide super-structure surface for high-gain ultraviolet photoelectric detector and preparation method of silicon carbide super-structure surface
  • Silicon carbide super-structure surface for high-gain ultraviolet photoelectric detector and preparation method of silicon carbide super-structure surface

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Embodiment 1

[0036] like figure 1 As shown in (a)-1(c), a silicon carbide metasurface for high-gain ultraviolet photodetectors includes:

[0037] insulating substrate;

[0038] The silicon carbide layer is arranged on the surface of the insulating substrate;

[0039] The silicon carbide metasurface is arranged on the surface of the silicon carbide layer;

[0040] Wherein, the superstructured surface of silicon carbide includes nano-columns or nano-pore micro-structures, the nano-columns or nano-pore micro-structures have the same spacing, and are periodically arranged on the surface of the silicon carbide layer according to the tetragonal lattice, and the material of the micro-structure is carbide. silicon;

[0041] The anti-reflection coating layer is arranged on the surface layer of the superstructured silicon carbide surface, and the material of the anti-reflection coating layer is silicon dioxide;

[0042] Electrodes are arranged on the surface of the anti-reflection coating.

[0...

Embodiment 2

[0052] The present embodiment provides a method for preparing a silicon carbide metasurface for a high-gain ultraviolet photodetector, comprising the following steps:

[0053] S1. Use highly symmetrical nano-pillars or nano-hole microstructures to design the silicon carbide metasurface, so as to reduce the sensitivity of the silicon carbide metasurface microstructure to the polarization state of incident light;

[0054] S2. Select the microstructure of subwavelength size to modify the silicon carbide layer, and optimize the size of the microstructure to achieve the effect of broadband absorption enhancement;

[0055]S3. On the basis of the silicon carbide metasurface, an anti-reflection coating is added to further improve the broadband absorption effect of the silicon carbide metasurface in the ultraviolet band.

[0056] The design process is specific, first considering the design of the SiC metasurface without the capping layer. The SiC metasurface adopts the microstructure ...

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Abstract

The invention discloses a silicon carbide super-structure surface for a high-gain ultraviolet photoelectric detector and a preparation method. The silicon carbide super-structure surface comprises an insulating substrate; a silicon carbide layer provided on the surface of the insulating substrate; a silicon carbide superstructure surface provided on the surface of the silicon carbide layer; wherein the surface of the silicon carbide super-structure comprises nano-column or nano-hole microstructures, the nano-column or nano-hole microstructures are arranged on the surface of the silicon carbide layer at equal intervals and are periodically arranged on the surface of the silicon carbide layer according to tetragonal lattices, and the material of the microstructures is silicon carbide; the anti-reflection covering layer is arranged on the surface layer of the surface of the silicon carbide metamaterial, and the anti-reflection covering layer is made of silicon dioxide. When incident light enters the microstructures on the surface of the super-structure, the incident light is coupled with the microstructures to generate a broadband absorption effect; after the 30 nm antireflection silicon dioxide covering layer is added to the surface of the super structure, absorption in a short wave band of the surface of the super structure can be further improved, and the intensity of generated light current can be increased to be two times that of light current generated by a plane structure.

Description

technical field [0001] The invention relates to the technical field of absorption type metasurfaces, in particular to a silicon carbide metasurface used for high-gain ultraviolet photodetectors and a preparation method. Background technique [0002] Silicon carbide (SiC) as a third-generation semiconductor has many excellent properties, including ultra-high thermal conductivity, good chemical stability, high strength (wear resistance, corrosion resistance, high temperature resistance, high hardness), high critical magnetic field, High electron saturation velocity, etc. Therefore, it is suitable for high-frequency, high-temperature, high-power, radiation-resistant electronic devices. In addition, silicon carbide has a wide band gap, which makes it useful for making ultraviolet detectors. Silicon carbide has the following advantages as a wide band gap material: silicon carbide is less affected by visible light due to its large band gap, which is beneficial to improve the sen...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0216B82Y20/00B82Y40/00H01L31/0236H01L31/028H01L31/18
CPCH01L31/02363H01L31/02168H01L31/028H01L31/1812B82Y20/00B82Y40/00Y02P70/50
Inventor 王继成赵少光吴晶晶刘禹
Owner JIANGNAN UNIV
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