Power type light-emitting diode die element and illuminated light sources containing die
A technology of light-emitting diodes and lighting sources, which is applied to electrical components, semiconductor devices, circuits, etc., and can solve problems such as powerless LED semiconductor solid-state lighting sources
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Embodiment 1
[0022] Embodiment 1 Preparation of a power type LED tube core component
[0023] see Figure 1 to Figure 3 , the processing method of the LED chip 3 in the die element is as follows:
[0024] 1) Use a substrate 31 ≥φ2 inches and epitaxially grow GaN-based light-emitting diodes on a sapphire substrate. The substrate is a sapphire substrate with a thickness of 1mm and a c-direction (0001)±0.2°, in the 180-220nm wavelength range There is a strong absorption peak, and both sides are polished; the N electrode 32 and the P electrode 33 of GaN-based light-emitting diodes use sputter coating, and the thickness of the coating is 180 Å;
[0025] 2) Laser cutting LED chips, that is, using a computer-controlled laser cutting machine to divide the GaN-based light-emitting diodes grown in the previous step into individual LED chips one by one along the designed dimensions; the area of a single chip is 1.5mm×1.5mm ;
[0026] 3) LED chip chamfering, that is, use a chamfering machine cont...
Embodiment 2
[0031] Embodiment 2 Preparation of another LED tube core component
[0032] Basically according to the method and steps of Embodiment 1, the difference is that the area of a single chip is 1 mm × 1 mm, and a pair of electrodes on the upper surface of the substrate are respectively connected to the N electrode and P electrode of the LED chip to form ohmic contacts by beam lead method welding; The above-mentioned beam lead method is to use the etching method to form Au beam lead on the N electrode and P electrode of the LED chip, and through the beam lead, the chip is hot-pressed on the electrode on the substrate with the electrode facing down. ,finish installation.
Embodiment 3
[0033] Embodiment 3 Preparation of a power-type semiconductor solid-state lighting source containing die elements
[0034] see Figure 4 , Figure 5 Put the above-prepared tube core components into a metal shell 1 of suitable size. In this embodiment, the material of the metal shell is copper, and there are two ceramic lead tubes 11 on the metal shell. The metal shell, the insulated lead tube and the metal lead therein Use insulating glue to sinter. Weld the electrodes on the base and the corresponding electrodes of the metal shell with gold wires; the reflector 4 is placed on the die element and combined with the base; Shell connection.
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