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Light cover patterning method for chemical gas phase deposition of focusing ion beam

A technology of focusing ion beams and gallium ion beams, applied in gaseous chemical plating, metal material coating process, coating, etc., can solve problems such as limitation of sub-micron component patterning

Inactive Publication Date: 2006-04-05
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This wet development process through photoresist development often limits the patterning of sub-micron features

Method used

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  • Light cover patterning method for chemical gas phase deposition of focusing ion beam
  • Light cover patterning method for chemical gas phase deposition of focusing ion beam
  • Light cover patterning method for chemical gas phase deposition of focusing ion beam

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Embodiment Construction

[0011] refer to figure 1 , which is a schematic diagram of a focused ion beam device used in the present invention. It should be noted that this figure only briefly depicts the parts relevant to the features of the present invention in a focused ion beam device, but does not exhaustively represent each component of a practically applied device, and this figure should not be regarded as a reference to the present invention implementation restrictions.

[0012] exist figure 1 In , part number 100 represents the gallium ion source, and part number 110 represents the ion optics. The ion optical system 110 includes optical elements such as various electrodes, apertures, and lenses. Element number 120 represents a gas injector for discharging a predetermined gas, for example, hydrocarbon gas. In this embodiment, the predetermined gas is pyrene gas.

[0013] Component number 130 represents a laser interferometer console whose movement is controlled by stepping motors 132 and 134...

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Abstract

A process for generating optical mask includes such steps as providing a quartz substrate, and using focused ion beam (Ga ion beam for example) and organic gas (carbon-hydrogen gas or pyrene gas for example) to deposit C onto said substrate to form an optical mask pattern.

Description

technical field [0001] The present invention relates generally to a method of patterning a mask in semiconductor processing; more specifically, to a method of forming a mask pattern using focused ion beam (FIB) chemical vapor deposition. Background technique [0002] In the current semiconductor industry, masks are usually formed by writing onto a mask blank with a laser beam or an electron beam. The blank mask is formed by sputtering chrome and chromium oxide on the surface of the substrate. On the surface of the chrome film, a thin layer of photoresist is then applied. This wet development process through photoresist development often limits the patterning of sub-micron features. Because some smaller features, such as tiny Optical Proximity Correction (OPC: Optical Proximity Correction) patterns, usually cannot be resolved by the photoresist development process, even if the exposure tool is configured with the smallest write gate. [0003] In addition, the damage to the...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/04
Inventor 陈新晋
Owner SEMICON MFG INT (SHANGHAI) CORP