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Metallization method for producing integrated circuit copper interconnecting wire by separating bipolar acid chemical plating

An integrated circuit and electroless plating technology, applied in the field of electroless plating, can solve problems such as substrate damage, corrosion, and inability to use, and achieve the effect of improving the bonding force

Inactive Publication Date: 2006-12-13
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] Although this acidic electroless plating method realizes direct electroless copper plating on the barrier layer, the silicon surface of the silicon substrate exposed to the solution is corroded while the copper film is deposited on the surface of the barrier layer, and the substrate is damaged and cannot be used. This method is not suitable for industrial applications

Method used

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  • Metallization method for producing integrated circuit copper interconnecting wire by separating bipolar acid chemical plating

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Effect test

Embodiment 1

[0024] The acidic solution is 1mol / l copper sulfate, 20wt% hydrofluoric acid, nitric acid and deionized water are added dropwise to adjust the pH of the solution to 0.2. The cathode of the silicon substrate is placed on the surface of the barrier layer facing the anode with a distance of 5mm, and the temperature of the acid solution during electroless plating is 50°C.

Embodiment 2

[0026] The acidic solution is 0.45mol / l copper nitrate, 10wt% hydrofluoric acid, adding deionized water to adjust the pH of the solution to 5, the silicon substrate cathode is placed on the surface of the barrier layer facing away from the anode, the distance is 0mm, the temperature of the acidic solution during electroless plating is 70°C.

Embodiment 3

[0028] The acid solution is 0.45mol / l copper sulfate, 8wt% hydrofluoric acid, adding deionized water to adjust the pH value of the solution to 3, the silicon substrate cathode is placed on the surface of the barrier layer of the anode, and the distance is 1mm. During electroless plating, the acid solution The temperature is 50°C.

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Abstract

The present invention relates to separated double electrode acid chemical plating process of preparing copper interconnection in integrated circuit, and belongs to the field of chemical plating application. The process adopts one silicon substrate as cathode, and one silicon substrate with coated refractory metal or its nitride on one side and the other parts coated with silver glue or organic glue to prevent corrosion in the chemical plating as anode, and the separated cathode and anode are set in acid solution to produce oxidation-reduction reaction, so as to plate one layer of copper film directly on the silicon substrate with refractory metal or its nitride. Thus produced copper film has homogeneous and fine particles, powerful combination with substrate, preferable (1, 1, 1) crystal particle orientation, and no cuprous oxide. The process may be used to replace alkaline and single electrode acid chemical copper plating process.

Description

technical field [0001] The invention belongs to the application field of electroless plating, and in particular relates to a novel separated double-electrode acidic electroless plating method, which is mainly applied to the interconnection wire metallization process of integrated circuits. Background technique [0002] In an integrated circuit, it is necessary to deposit a metal thin film on the silicon substrate of the integrated circuit, and form a metal wire by photolithography technology, and connect the isolated components into the required circuit according to certain requirements. This metal wire is called an integrated circuit interconnection. connection. The process of depositing a metal thin film on an integrated circuit silicon substrate is called a metallization process. [0003] With the emergence of ultra-large-scale integrated circuits, aluminum and aluminum alloys have high resistivity and weak anti-electromigration ability. Depositing aluminum and aluminum ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/288H01L21/445C25D3/38C25D7/12
Inventor 杨志刚钟声
Owner TSINGHUA UNIV
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