A manufacturing method of a PMOS (p-channel metal oxide semiconductor) device includes providing a substrate, forming an isolation structure in the substrate, forming a grid and side walls above the substrate and forming a source area and a drain area in the substrate; forming a silicon layer on the surfaces of the source area, the drain area and the side walls; converting the silicon layer into a silicide contact layer; forming conductive plugs on the silicide contact layer. The invention further provides the PMOS device. The PMOS device comprises the substrate, the isolation structure, the source area, the drain area, the grid, the side walls, the silicide contact layer and the conductive plugs, wherein the isolation structure, the source area and the drain area are formed in the substrate, the grid and the side walls are arranged on the substrate between the source area and the drain area, the silicide contact layer is formed on the surfaces of the source area, the drain area and the side walls, and the conductive plugs are formed on the silicide contact layer. The PMOS device has the advantages that even if the conductive plugs deviate, the conductive plugs cannot be disconnected with the source area or the drain area, and the source area and the drain area are small enough, so that the performance of the PMOS device is improved.