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Pure static state double heating apparatus for crystal growth by temperature gradient technique

A technology of crystal growth and double heating, which is applied in the field of crystallization technology, can solve the problems of thermal insulation shield damage, failure to grow crystals, etc., and achieve the effect of good thermal field stability

Inactive Publication Date: 2007-06-20
周永宗
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The softening point temperature of molybdenum product material in the atmosphere containing carbon (C) is about 2100°C. Excessive room temperature difference for crystal growth will cause damage to the crucible and insulation shield, making it impossible to grow crystals.

Method used

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  • Pure static state double heating apparatus for crystal growth by temperature gradient technique

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Embodiment Construction

[0011] The present invention will be described in further detail below in conjunction with the accompanying drawings and embodiments.

[0012] As shown in FIG. 1 , a purely static double heating temperature gradient method crystal growth device is provided with 4 electrode rods, 2 auxiliary electrode rods 2 and 2 main electrode rods 3 on the chassis 32 of a bell-type high-vacuum single crystal furnace. The electrode rods 2 and 3 are cooled by water to ensure that the electrode rods 2 and 3 are in insulated and sealed contact with the chassis 32 of the single crystal furnace through the high temperature resistant polyvinyl fluoride and the sealing ring.

[0013] In order to reduce the temperature difference between the upper end of the molybdenum crucible 10 and the seed crystal 11, an auxiliary heating element 6 with an inverted conical shaped strip is provided under the crucible 10, and the auxiliary heating element 6 is tightly pressed on the annular trapezoid by the auxiliar...

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Abstract

The invention discloses the crystallization technology domain, a kind of pure static state double heating temperature gradient method crystal growth installment, including the bell glass type perfect vacuum unit crystal stove, in has 4 electrodes, 2 pays the plate, the double heating element, provides the double power source, double controls the warm heating system. The heating element constitutes by the rectangular undulation plank auxiliary heating element. Advocates auxiliary heating element on, underneath and all around is equipped with the good heat preservation effect on hot back plate, gets down the hot back plate and the side shield establishment, advocates in space which the auxiliary heating element surrounds, by has seed crystal the trough round the cone-shape crucible constitution crystal growth room. The invention crystal growth installment, the airtight performance good, the hot field is stable. Suits to grows the large diameter center, the high temperature crystal, like sapphire crystal, yttrium aluminum garnet crystal, aluminum ytrium crystal, as well as calcium fluoride and so on crystal and so on.

Description

technical field [0001] The invention belongs to the field of crystallization technology, a pure static double heating temperature gradient method crystal growth device, specifically, a double heating single temperature zone temperature gradient method crystal growth device, especially suitable for growing large diameter high melting point oxide crystals, of course also Suitable for growing other types of crystals. Background technique [0002] Although double heating, dual temperature zones, and multiple heating and multiple temperature zone methods have been widely used in the world to grow III-V semiconductor crystals and calcium fluoride crystals. For example, the Beijing Institute of Nonferrous Metals uses the multi-temperature zone method to grow GaAs crystals. But in the past, double heating and multi-heating are all to create dual temperature zones. The multi-temperature zone method is engaged in the temperature gradient crucible drop method or the crucible moving met...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B11/00C30B35/00
Inventor 周永宗
Owner 周永宗
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