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Developing solution for photoresist

A technology of photoresist and developer, applied in optics, photography, liquid soap, etc., can solve unsatisfactory problems

Inactive Publication Date: 2003-01-22
TOKUYAMA CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0011] In this regard, although it has also been tried to suppress the solubility of the insoluble part by using a specific nonionic surfactant, and there is a certain degree of effect, it is not ideal and needs further improvement

Method used

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  • Developing solution for photoresist
  • Developing solution for photoresist

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Embodiment 1～10 and comparative example 1～3

[0059] As a developing solution, the surfactant and the amount shown in Table 1 were added to a 2.38% by weight aqueous solution of TMAH (trade name SD-1 manufactured by Tokuyama Co., Ltd.). The surface tension was determined for the adjusted developer solution. The results are shown in Table 2.

[0060] Next, a silicon wafer was prepared, and the treated surface was cleaned with sulfuric acid-hydrogen peroxide (volume ratio 4:1). Then, baking was performed on a hot plate at 200° C. for 60 seconds. After baking, apply hexamethyldisilazane (HMDS) to hydrophobize the wafer surface. Next, chemically amplified positive photoresists A (t-Boc type), B (acetal type), and C (ESCAP type) for KrF excimer lasers were coated on the silicon wafer with a spin coater. Finally, prebaking was carried out under the conditions shown in Table 3, cooling after prebaking, and then exposing for 100 seconds with an ultraviolet lamp (7 μW) having a spectrum of 248 nm in a square range of 12×12 mm. ...

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Abstract

A photoresist developer which is excellent in the wettability of a non-soluble portion of a photoresist after exposure and the solubility of a soluble portion and controls the dissolving speed of the non-soluble portion effectively. This developer is prepared by adding a nonionic surfactant and a cationic surfactant to an alkali aqueous solution in a total amount of 10 to 5,000 ppm by weight.

Description

technical field [0001] The present invention relates to a novel photoresist developer. More specifically, it relates to a photoresist developing solution that has excellent wettability of an insoluble part in a photoresist after exposure, excellent solubility of a soluble part, and can effectively suppress the dissolution rate of the insoluble part. Background technique [0002] In the manufacture of semiconductor devices, densification and miniaturization of semiconductor integrated circuits have progressed in recent years. For example, in the lithography process of pattern formation, as the light source of the exposure device, from KrF excimer laser (248nm) to ArF excimer laser (198nm) to F 2 Excimer laser (157nm) transition. [0003] In these lithography processes, the mask on which the circuit pattern is drawn is transferred to the photoresist on the wafer by exposure, and then by contacting the exposed surface of the photoresist with a developing solution, for positiv...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/039C11D1/835C11D3/26C11D17/08G03F7/32H01L21/027
CPCG03F7/322G03F7/32
Inventor 山下喜文川田聪志野仲徹
Owner TOKUYAMA CORP
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