Method of increasing oxygen content in vertical pulling silicon single crystal rod and automatic aerator

An oxygen booster and single crystal rod technology, which is applied in the field of doping technology and devices, can solve the problems of increased opportunities for silicon single crystals, increased silicon monoxide deposits, and unfavorable growth of silicon crystals stably, and achieves a wide range of types and structures. Simple, oxygen-increasing effect

Inactive Publication Date: 2003-04-30
GRINM SEMICONDUCTOR MATERIALS CO LTD
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  • Summary
  • Abstract
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  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

After adopting this method, due to the increase of the pressure of the growth chamber atmosphere, the silicon monoxide deposits in the growth chamber increase, and the chance of dislocation (a lattice defect of silicon single crystal) in the silicon single crystal increases. , which is detrimental to the stable growth of silicon crystals

Method used

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  • Method of increasing oxygen content in vertical pulling silicon single crystal rod and automatic aerator
  • Method of increasing oxygen content in vertical pulling silicon single crystal rod and automatic aerator
  • Method of increasing oxygen content in vertical pulling silicon single crystal rod and automatic aerator

Examples

Experimental program
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Effect test

Embodiment 1

[0051] In the present embodiment, at first the aerator of the frustum-shaped body made of semiconductor grade quartz is placed at the bottom center of the quartz crucible 16, and 60 kilograms of polysilicon as a raw material are added on the aerator, during the melting process of the heated polysilicon , the aerator and the inner wall of the quartz crucible are welded together, the seed crystal with a specific crystal orientation is installed, the furnace chamber is closed, and the vacuum is evacuated to 5.0×10 3 pa, and then heated to melt the polysilicon. After the polysilicon is melted, the oxygenator remains in the stone-made silicon melt. During the whole process of pulling silicon single crystal, the oxygenator also remains in the melt, and gradually drops to near the melting point of the molten silicon. (1420° C.), make the quartz crucible and the seed crystal reversely rotate, the quartz crucible rotates at 10 rpm, and the seed crystal rotates at 20 rpm. Slowly lower t...

Embodiment 2

[0054] The operation method and equipment are basically the same as in Example 1, except that the oxygen generator is not placed at the bottom center of the quartz crucible, and the oxygen concentration at the head of the silicon single crystal rod is 37ppma.

Embodiment 3

[0056] Its method of operation and equipment are basically the same as embodiment 1, and only difference is that the aerator made of semiconductor grade quartz used is a conical body, and the height of the conical body is 32mm, and the diameter of the upper top surface of the conical body is 10mm, Its base diameter is 20 mm, and their diameter ratio is 1:2. The head oxygen concentration in the silicon single crystal rod was 39.0 ppma.

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Abstract

A process for increasing the oxygen content of vertical pulling monosilicon rod includes such steps as arranging the oxygen increaser made of quartz to the bottom of quartz crucible, adding monosilicon to said oxygen increaser, smelting monosilicon, and pulling. Its advantages are simple structure and high effect.

Description

(1) Technical field [0001] The invention relates to a doping process and a device for contacting a single crystal with a solid material, more specifically a method and a device for increasing doping oxygen when producing a single crystal silicon rod. (2) Background technology [0002] Most semiconductor silicon single crystals are produced by the Czochralski method. In this method, polysilicon is put into a quartz crucible, heated and melted, and then the temperature of the molten silicon is slightly lowered, and a certain degree of supercooling is given, and a silicon single crystal (called a seed crystal) with a specific crystal orientation is combined with the molten silicon. Bulk silicon contact, by adjusting the temperature of the melt and the upward lifting speed of the seed crystal, when the seed crystal grows to a diameter close to the target, increase the lifting speed to make the single crystal grow with a nearly constant diameter. At the end of the growth process...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/04
Inventor 屠海令周旗钢张果虎戴小林吴志强方锋
Owner GRINM SEMICONDUCTOR MATERIALS CO LTD
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