Method of increasing oxygen content in vertical pulling silicon single crystal rod and automatic aerator

An oxygen booster and single crystal rod technology, which is applied in the field of doping technology and devices, can solve the problems of increased opportunities for silicon single crystals, increased silicon monoxide deposits, and unfavorable growth of silicon crystals stably, and achieves a wide range of types and structures. Simple, oxygen-increasing effect
CN1414148AInactive Publication Date: 2003-04-30GRINM SEMICONDUCTOR MATERIALS CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
GRINM SEMICONDUCTOR MATERIALS CO LTD
Publication Date
2003-04-30
Estimated Expiration
Not applicable · inactive patent

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Abstract

A process for increasing the oxygen content of vertical pulling monosilicon rod includes such steps as arranging the oxygen increaser made of quartz to the bottom of quartz crucible, adding monosilicon to said oxygen increaser, smelting monosilicon, and pulling. Its advantages are simple structure and high effect.
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Description

(1) Technical field

[0001] The invention relates to a doping process and a device for contacting a single crystal with a solid material, more specifically a method and a device for increasing doping oxygen when producing a single crystal silicon rod. (2) Background technology

[0002] Most semiconductor silicon single crystals are produced by the Czochralski method. In this method, polysilicon is put into a quartz crucible, heated and melted, and then the temperature of the molten silicon is slightly lowered, and a certain degree of supercooling is given, and a silicon single crystal (called a seed crystal) with a specific crystal orientation is combined with the molten silicon. Bulk silicon contact, by adjusting the temperature of the melt and the upward lifting speed of the seed crystal, when the seed crystal grows to a diameter close to the target, increase the lifting speed to make the single crystal grow with a nearly constant diameter. At the end of the growth process...

Claims

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