Method and equipment for raising speed of electronic cyclotron resonance chemical vapor deposition

An electron cyclotron resonance and chemical vapor deposition technology, applied in the field of plasma, can solve the problems of poor magnetic field distribution uniformity, low film deposition speed, complicated control, etc., and achieve the effects of low manufacturing cost, improved film deposition speed, and small device volume.
CN1417375AInactive Publication Date: 2003-05-14BEIJING UNIV OF TECH
0 Cites 7 Cited by

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
BEIJING UNIV OF TECH
Publication Date
2003-05-14
Estimated Expiration
Not applicable · inactive patent

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The present invention relates to microwave low temperature plasma technology. The equipment includes microwave source, vacuum sealing, film depositing and vacuum pump systems and magnetic field generating and gas path and gas controlling parts. The magnetic field winding is set around the resonant cavity wall to generate axial magnetic field configuration required by the electronic cyclotron resonance. The present invention is characterized by the permanent magnet unit, which is set over the sample bench to generate homogeneous axial magnetic field in the depositing chamber, and has small volume and thus great moving space in the depositing chamber and great axial magnetic field change. The axial magnetic field configuration is formed and regulated through the combination of the winding and the permanent magnet unit, and the magnetic field configuration results in high film depositing speed.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] A method and device for increasing the speed of electron cyclotron resonance chemical vapor deposition belong to the technical field of microwave low-temperature plasma. Background technique

[0002] High-speed deposition of thin films is an important development direction for microwave plasma applications. Electron cyclotron resonance (ECR) plasma is a new type of microwave plasma developed in the past ten years. Due to its high degree of ionization and no electrode pollution, it has been paid more and more attention by people. However, there are still some problems in controlling the axial magnetic field configuration of electron cyclotron resonance plasma in the prior art, resulting in the electron cyclotron resonance CVD thin film deposition rate hovering at a low level.

[0003] The configuration of the axial magnetic field in the vacuum deposition chamber plays a crucial role in controlling the shape of the plasma and the deposition rate of the...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More