Low-wst technology for quickly growing silicon-base film
A silicon-based thin film, low-cost technology, used in gaseous chemical plating, coating, metal material coating processes, etc., can solve the problems of difficult control of substrate temperature, unfavorable low-temperature deposition, low film quality, etc., to save raw materials. , Low substrate temperature and good film performance
Inactive Publication Date: 2003-08-27
东君新能源有限公司
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Problems solved by technology
The main problem of VHF-PECVD technology is that ion bombardment causes defects in the film, and the quality of the formed film is not high
The main problem of HW-CVD technology is the high temperature of the hot wire (>1500°C). Since the hot wire is close to the substrate, the substrate temperature will continue to rise on the basis of the original setting under the baking of the hot wire. Therefore, the substrate temperature is not easy to control, and it is not conducive to low temperature deposition
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[0013] figure 1 It is a schematic diagram of the working principle of VHF-PECVD. An ultra-high frequency power signal is applied between two parallel plate electrodes 1 and 4 to decompose gases such as silane, and deposit a film through a chemical vapor phase reaction, and place it on the cathode glass, plastic and other substrates. . The main problem is that ion bombardment causes defects in the film and the quality of the formed film is not high. figure 2 It is a schematic diagram of the working principle of HW-CVD. The main problem of HW-CVD technology is that the temperature of the hot wire is high (>1500°C). Since the hot wire is close to the substrate, the temperature of the substrate is kept at the original setting under the baking of the hot wire. On a constant basis, the substrate temperature is not easy to control, and it is not conducive to low-temperature deposition. image 3 It is a schematic diagram of the working principle of Cat-VHF-PECVD of the present inve...
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The invention refers to grow silicon group film, especially the low cost technology which can grow high quality silicon group film on low temperature underlay. The invention overcomes the deficiencies in normal method such as the growth speed is low, the underlay temperature is high or ion striking and integrates the merits. The scheme is: the reaction gas such silicon hydride is heated by heating threads, and the gas is transmitted to the middle of electrodes which is put on ultra high frequency power signal, only need feeblish very high frequency signal, makes the silicon hydride is easy to be decomposed, it decreases the ion strike through forming film with chemical gas reaction, and improves the quality of film.
Description
technical field [0001] The invention relates to high-speed growth of silicon-based thin films (amorphous silicon, amorphous silicon germanium, amorphous silicon carbon, amorphous silicon nitrogen; microcrystalline silicon, microcrystalline silicon germanium; polycrystalline silicon and other films) on cheap substrates such as glass and plastics. technology, especially a low-cost technology for high-speed growth of silicon-based thin films using thermal catalytic very high frequency plasma-enhanced chemical vapor deposition (Cat-VHF-PECVD), which belongs to the technical field of optoelectronic devices such as thin-film photovoltaic cells and thin-film transistors . technical background [0002] Conventional methods for growing silicon-based films include radio frequency plasma enhanced chemical vapor deposition (rf-PECVD) technology, photo (Photo)-CVD technology, rapid thermal (RT)-CVD technology, sputtering (SP) technology, etc. In order to increase the growth rate, thereb...
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Login to View More IPC IPC(8): C23C16/24C23C16/50
Inventor 耿新华赵颍薛俊明
Owner 东君新能源有限公司