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Raw-material compound for CVD and chemical gas-phase steam-plating method for iridium and iridium compound film

A chemical gas phase and compound technology, applied in chemical instruments and methods, gaseous chemical plating, organic chemistry, etc., can solve the problems of difficult recycling, rising film cost, and difficult to use, and achieve easy gasification and high manufacturing efficiency. Effect

Inactive Publication Date: 2003-11-12
TANAKA PRECIOUS METAL IND
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  • Summary
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Problems solved by technology

But such recycling is difficult for currently known β-diketone iridium compounds.
Because the solid β-diketone iridium compound is very difficult to recover in liquid state, and it is impossible to refine it by distillation
The liquid β-diketone iridium compound is difficult to separate and refine by distillation due to its low vapor pressure.
Therefore, it is difficult to use the known β-diketone iridium compound by the CVD method using recycling technology, and the cost of producing thin films using this compound will increase.

Method used

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Embodiment Construction

[0034] Hereinafter, the best mode for carrying out the present invention will be described.

[0035] Production of tris(5-methyl-2,4-hexanedione)iridium

[0036] Add water, iridium chloride trihydrate 10.0g (27.29mmol, iridium content 52.46%) and 5-methyl-2,4-hexanedione 10.77g (84.77mmol) as solvent in the detachable flask, in Heat to reflux at 93-95°C for 4 hours. Then, potassium bicarbonate (addition amount: 11.18 g) was added to make the pH of the solution 8.0. The solution was then heated to reflux at 93-95°C for 5 hours to allow the reaction to proceed.

[0037] The reaction solution was transferred to a detachable funnel, and extracted with 10% sodium hydroxide solution / hexane. The extraction was repeated 4-5 times until the hexane layer was transparent. The extract thus obtained was reduced in weight with a rotary evaporator and re-extracted with water, and anhydrous magnesium sulfate was added to the extract (hexane layer) for dehydration. The extract after the...

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Abstract

This invention provides raw material compounds for use in CVD which contain an organic iridium compound as a main ingredient, the organic iridium compound consisting of tris(5-methyl-2,4-hexanedionato)iridium. According to the CVD which uses the above raw material compounds, a pure iridium thin film and an iridium oxide thin film of excellent morphology can be produced effectively.

Description

technical field [0001] The present invention relates to the raw material used for producing iridium or iridium compound film by CVD method and its production method. Background technique [0002] In recent years, precious metals such as iridium and ruthenium have been used as thin-film electrode materials for various semiconductor devices. This is due to the fact that noble metals have low resistivity and have excellent electrical properties as electrodes. In particular, iridium and its oxides are used as the upper and lower electrodes of FeRAM. [0003] The thin film used for the thin film electrode is generally produced by the sputtering method. In recent years, the application of chemical vapor deposition method (Chemical Vapor Deposition method, hereinafter referred to as CVD method) has been researched. This is because a uniform thin film can be easily produced by the CVD method, and its step coverage is superior to that of the sputtering method. Furthermore, as a m...

Claims

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Application Information

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IPC IPC(8): C07C49/92C07F15/00C23C16/18C23C16/40H01L21/02H01L21/8246H01L27/105
CPCC23C16/40C23C16/18H01L28/55H01L28/60C07F15/00
Inventor 齐藤昌幸寒江威元
Owner TANAKA PRECIOUS METAL IND
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