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Method for producing low-dielectric constant material and chemical vapour phase deposition (CVD)

A technology of dielectric constant and volume density, applied in the field of low dielectric constant materials and chemical vapor deposition preparation

Inactive Publication Date: 2004-06-23
AIR PROD & CHEM INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0017] Despite the above developments, there is no solution in the prior art that successfully combines the desired properties of mechanical, electrical conductivity, thermal and oxidative stability, which are extremely important for producing low-k dielectric materials in integrated circuits

Method used

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  • Method for producing low-dielectric constant material and chemical vapour phase deposition (CVD)
  • Method for producing low-dielectric constant material and chemical vapour phase deposition (CVD)
  • Method for producing low-dielectric constant material and chemical vapour phase deposition (CVD)

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Experimental program
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Embodiment

[0073] All experiments were performed with an Applied Materials Accuracy-5000 system, a 200mm DxZ cavity equipped with an AdvanceEnergy 2000rf generator, and undoped TEOS processing tools. The method includes the following basic steps: initial composition and stabilization of the gas flow, deposition out, and purge / evacuation of the chamber prior to wafer removal. Subsequently, after each deposition process using C 2 f 6 +O 2 Clean the cavity in place before drying the cavity.

[0074] Using the Hg detection technology on the low resistivity p-type wafer (13 C-NMR data, X-ray Electron Photon Spectroscopy (XPS) analysis with Physical Electronics (Physical Electronics) 5000LS to obtain component composition data.

[0075] Comparative Examples 1-6 were established based on those described in US Patent Nos. 6,159,871 and 6,054,379 and WO 99 / 41123 and are listed in Table 2 below.

[0076] Table 2 Precipitation data of OSG deposition from trimethylsilane and oxygen ...

Embodiment 21

[0112] A contemplated embodiment of the invention based on the use of 1,3,5,7-tetramethylcyclotetrasiloxane (TMCTS) as the organosilane precursor, a 200mm silicon wafer substrate, the specific data are listed in Table 4 below.

[0113] Table 4

[0114] pressure (torr)

[0115] It expects a k value between 2.8 and 3.0, a Young's modulus of about 15 GPa, and a nanoindentation hardness of about 2 GPa.

[0116] A contemplated embodiment of the invention based on the use of dimethyldimethoxysilane (DMDMOS) as the organosilane precursor, a 200 mm silicon wafer substrate, the specific data are listed in Table 5 below.

[0117] pressure (torr)

[0118] It expects a k value between 2.8 and 3.0, a Young's modulus of about 15 GPa, and a nanoindentation hardness of about 2 GPa.

[0119] A contemplated embodiment of the invention based on the use of diethoxymethylsilane (DEMS) as the organosilane precursor, a 200 mm silicon wafer substrate, the...

Embodiment 22

[0123] The OFSG film of the present invention is composed of trimethyl at a pressure of 1-16torr, a plasma energy of 100-1000Watts, an electrode spacing of 200-4000milli-inches (5.08-10.16mm), and a temperature of 200-425°C. Silane (the flow rate is 1-1000sccm), SiF 4 (its flow velocity is 1-1000sccm), and O 2 (The flow velocity is 1-200sccm) deposited. corresponding to the OSG film, in addition to no SiF 4 Under the same deposition conditions, it uses trimethylsilane / O 2 It is formed by gaseous mixed deposition.

[0124] The structure and composition of the precursor gas greatly affect the structure and composition of the film deposited by chemical vapor deposition. Using SiF 4 As the only source of F source, this guarantees the absence of C-F bonds in the precursor gas mixture. Since the C-F bond does not have the thermodynamic stability of the Si-F bond, it is difficult to form a C-F bond, so in the final film, we believe that the Si-F bond appears.

[0125...

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Abstract

Organofluorosilicate glass films contain both organic species and inorganic fluorines, exclusive of significant amounts of fluorocarbon species. Preferred films are represented by the formula SivOwCxHyFz, where v+w+x+y+z=100%, v is from 10 to 35 atomic %, w is from 10 to 65 atomic % y is from 10 to 50 atomic %, x is from 1 to 30 atomic %, z is from 0.1 to 15 atomic %, and x / z is optionally greater than 0.25, wherein substantially none of the fluorine is bonded to the carbon. In one embodiment there is provided a CVD method that includes: providing a substrate within a vacuum chamber; introducing into the vacuum chamber gaseous reagents including a fluorine-providing gas, an oxygen-providing gas and at least one precursor gas selected from an organosilane and an organosiloxane; and applying energy to the gaseous reagents in the chamber to induce reaction of the gaseous reagents and to form the film on the substrate.

Description

[0001] Cross-references to related applications [0002] This application is a continuation-in-part of US Patent Application Serial No. 09 / 863,150, filed May 23, 2001, the entire disclosure of which is incorporated herein by reference. technical field [0003] The invention belongs to the field of dielectric materials used in the electronic industry, in particular to low dielectric constant materials and chemical vapor deposition (CVD) preparation methods. Background technique [0004] The electronics industry utilizes dielectric materials as insulating layers between circuits and components in integrated circuits and their associated electronic devices. In order to increase the speed and memory capacity of microelectronic devices (eg, computer chips), their linear scale needs to be reduced. The scale of microchips has undergone considerable reduction in the past ten years, from more than 1 micron in the past ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08G83/00C03C3/04C03C14/00C23C16/30C23C16/40C23C16/42H01B3/12H01L21/31H01L21/312H01L21/316H01L21/768H01L23/522
CPCH01L21/02274H01L21/02337Y10T428/31663H01L21/02211H01L21/3122H01L21/31629C23C16/30H01L21/316C03C14/00H01L21/02131H01L21/02203C03C3/045C23C16/401C03C14/008H01L21/31633H01L21/3127C03C3/04H01L21/02216H01L21/02126H01L21/0212H01L21/31
Inventor M·L·奥内尔A·S·鲁卡斯M·D·比特纳J·L·文森特R·N·弗蒂斯B·K·彼得森
Owner AIR PROD & CHEM INC