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Method for detecting deposition temperature

A technology of deposition temperature and detection method, used in semiconductor/solid-state device testing/measurement, gaseous chemical plating, coating, etc. Effect

Inactive Publication Date: 2004-08-11
MACRONIX INT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At this time, because a certain number of defective products have been produced, resulting in a decrease in product yield (yield)

Method used

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  • Method for detecting deposition temperature
  • Method for detecting deposition temperature
  • Method for detecting deposition temperature

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Experimental program
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Embodiment Construction

[0017] Please refer to figure 1 , which shows a flow chart of the method for detecting the deposition temperature of the reaction chamber of the chemical vapor deposition machine of the present invention. Firstly, step S100 is performed, placing the to-be-deposited material in the reaction chamber. Wherein the reaction chamber is, for example, the reaction chamber of a chemical vapor deposition machine, and the deposit to be deposited is, for example, a test control sheet.

[0018] Next, step S102 is performed, depositing a metal silicide layer on the deposit to be deposited. The material of the metal silicide layer is, for example, tungsten silicide, titanium silicide, tantalum silicide, molybdenum silicide or nickel silicide.

[0019] For example, the deposition of tungsten silicide film is taken as an example for illustration. First, Tungsten Hexafluoride (Tungsten Hexafluoride) was used as the source gas of tungsten, and Dichlorosilane (Dichlorosilane, SiH 2 Cl 2 ) or...

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Abstract

Method suitable for measuring deposition temp in reaction chamber of device in chemical vapor deposition includes putting object to be deposited inside reaction chamber; forming metallic silicide layer on the object to be deposited; measuring ratio of silicon / metallic atom of the metallic silicide layer; substituting the said ratio of silicon / metallic atom into relational expression between silicon / metallic atom and temp to obtain deposition temp. Deposition temp of device in chemical vapor deposition can be detected and monitored through the invented method in real time.

Description

technical field [0001] The present invention relates to a method for detecting the deposition temperature of a reaction chamber (chamber) of a chemical vapor deposition (Chemical Vapor Deposition, CVD) machine, and in particular relates to a method for using atomic comparison chemistry of metal silicides. A method for detecting the deposition temperature of a reaction chamber of a vapor deposition machine. Background technique [0002] In recent years, chemical vapor deposition has become the most important and main thin film deposition tool in the semiconductor manufacturing process. Thin films required for all semiconductor components, whether growing metal layers such as tungsten, titanium, copper, aluminum, etc., or growing barrier layers such as titanium nitride, tantalum nitride, etc., or growing dielectric materials such as barium strontium titanium Oxide (BaSrTiO x ), strontium bismuth tantalum oxide (SrBiTaO x ), silicon oxyfluoride (SiOF), silicon dioxide, etc.,...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/00H01L21/205H01L21/66
Inventor 周世良吴琮钦林宗德洪天爵曾国佑练文政
Owner MACRONIX INT CO LTD