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Method for detecting deposition temperature in chemical vapour deposition chamber

A chemical vapor deposition, deposition temperature technology, applied in gaseous chemical plating, electrical components, semiconductor/solid-state device testing/measurement, etc., can solve problems such as product yield reduction, improve product yield, and reduce preventive maintenance time. Effect

Inactive Publication Date: 2006-06-14
MACRONIX INT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At this time, because a certain number of defective products have been produced, resulting in a decrease in product yield (yield)

Method used

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  • Method for detecting deposition temperature in chemical vapour deposition chamber
  • Method for detecting deposition temperature in chemical vapour deposition chamber
  • Method for detecting deposition temperature in chemical vapour deposition chamber

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Experimental program
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Embodiment Construction

[0017] Please refer to figure 1 , which shows a flow chart of the method for detecting the deposition temperature of the reaction chamber of the chemical vapor deposition machine of the present invention. Firstly, step S100 is performed, placing the to-be-deposited material in the reaction chamber. Wherein the reaction chamber is, for example, the reaction chamber of a chemical vapor deposition machine, and the deposit to be deposited is, for example, a test control sheet.

[0018] Next, step S102 is performed, depositing a metal silicide layer on the deposit to be deposited. The material of the metal silicide layer is, for example, tungsten silicide, titanium silicide, tantalum silicide, molybdenum silicide or nickel silicide.

[0019] For example, the deposition of tungsten silicide film is taken as an example for illustration. First, Tungsten Hexafluoride (Tungsten Hexafluoride) was used as the source gas of tungsten, and Dichlorosilane (Dichlorosilane, SiH 2 Cl 2 ) or...

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Abstract

A method for detecting deposition temperature, suitable for detecting the deposition temperature of a reaction chamber of a chemical vapor deposition machine, comprising: placing a deposit in the reaction chamber; forming a metal silicide layer on the deposit; measuring the metal silicide the silicon / metal atomic ratio of the layer; and substituting the silicon / metal atomic ratio into the silicon / metal atomic ratio versus temperature equation to find the deposition temperature. Through the above method, the deposition temperature of the machine can be detected and monitored in real time.

Description

technical field [0001] The present invention relates to a method for detecting the deposition temperature of a reaction chamber (chamber) of a chemical vapor deposition (Chemical Vapor Deposition, CVD) machine, and in particular relates to a method for using atomic comparison chemistry of metal silicides. A method for detecting the deposition temperature of a reaction chamber of a vapor deposition machine. Background technique [0002] In recent years, chemical vapor deposition has become the most important and main thin film deposition tool in the semiconductor manufacturing process. Thin films required for all semiconductor components, whether growing metal layers such as tungsten, titanium, copper, aluminum, etc., or growing barrier layers such as titanium nitride, tantalum nitride, etc., or growing dielectric materials such as barium strontium titanium Oxide (BaSrTiO x ), strontium bismuth tantalum oxide (SrBiTaO x ), silicon oxyfluoride (SiOF), silicon dioxide, etc.,...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/66H01L21/205C23C16/00
Inventor 周世良吴琮钦林宗德洪天爵曾国佑练文政
Owner MACRONIX INT CO LTD