Opto-electronic device integration

Abstract

A method of creating a hybridized chip having at least one top active device coupled to an electronic chip where a top active device is combined with an electronic chip having electronic chip contacts, when at least some of the top active device contacts are not aligned with at least some of the electronic chip contacts, and each of the at least some top active device contacts has an electrically corresponding electronic chip contact. The method involves creating sidewalls defining openings in the substrate, extending from the first side at the active device contacts to the bottom fo the substrate opposite the first side, at points substantially coincident with the active device contacts; making the sidewalls electrically conductive; and connectin g the points and the electronic chip contacts with an electrically conductive material.

Description

technical field [0001] The invention relates to the integration of optoelectronic devices, especially the integration of high yield and high density optoelectronic devices. Background technique [0002] figure 1 and figure 2 A method employed in the prior art to attach multiple bottom emitting (or detecting) devices (also referred to as back emitting or detecting devices) to form an integrated optoelectronic device is described. [0003] according to figure 1 In the method, a plurality of lasers are formed on the wafer substrate 102 in a conventional manner, and for a plurality of detectors (referred to interchangeably as photodetectors here), on its own or on the same wafer substrate as the lasers, the method also Same. Generally speaking, the portion 104 of the substrate 102 closest to the connection between the optoelectronic devices 106, 108 and the substrate 102 is made of a material that is optically transparent to the operating wavelen...

AI Technical Summary

Problems solved by technology

[0024] What is lacking in the prior art is a solution that eliminates the need to pattern the protective layer on the laser while allowing anti-reflection coating to be applied over the entire wafer (i.e. laser and detector)

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