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Multilayer device and its producing method

A device and component technology, applied in the field of packaging solutions for monolithic integrated systems, can solve problems such as unusable devices and incompatibility, and achieve the effect of improving reliability and quality

Inactive Publication Date: 2004-09-29
森松诺尔公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there are issues with this approach, such as the sheet resistance achievable with buried conductors, parasitic capacitance associated with the depletion region surrounding buried conductors, polarity and temperature limitations of using PN junction isolation, and compatibility with some CMOS and Incompatibility of BiCMOS process
This means that the process cannot be used for all types of devices, with limitations

Method used

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  • Multilayer device and its producing method
  • Multilayer device and its producing method
  • Multilayer device and its producing method

Examples

Experimental program
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Embodiment Construction

[0036] figure 1 a) shows a cross-sectional view of a preprocessed silicon wafer 100 . The passivation layer 101 may consist of a first layer of phosphosilicate glass (PSG) plus a layer of silicon nitride (SiN) - other combinations may also be used. Post-processing may include patterning of the layers in the passivation layer individually or simultaneously. Factors governing this process will be cost and technical issues such as the ease or feasibility of contamination control and reprocessing. The main function of the passivation layer is to prevent sodium contamination of the underlying circuitry. Aluminum contact pads 102 are shown, but the underlying conductive and dielectric layers are not included to improve the clarity of the drawing. A passivation layer 101 and a contact pad 102 are formed on a substrate 103 .

[0037] The first process steps carried out on the wafer 100, such as figure 1 Shown in b) is the deposition of the first layer of positive photoresist 104 ...

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PUM

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Abstract

A method for producing a multi-layer device. The method initially providing a substrate which comprises a support region for supporting an electrical component, then forming an electrically conductive bond layer on a surface of the substrate. The bond is configured to surround the region for supporting the component. The next step in the method is to provide an encasing layer in contact with the bond layer, such that the component is encased between the substrate and the encasing layer. The final step involves bonding the encasing layer to the bond layer to form a sealed cavity which encloses the component. Further, a multi-layer device is provided. The device comprises a substrate, at least one electrical component which is located on the substrate, an electrically conductive bond layer and an encasing layer. The bond layer is formed on the substrate and surrounds the electrical components and the encasing layer is bonded to the bond layer to form a sealed cavity encasing the components therein.

Description

technical field [0001] The invention relates to the technical field of chip size packaging. In particular, it relates to packaging solutions suitable for monolithic integrated systems. Monolithically integrated systems can be passive microstructures, microsensors, microactuators, interconnect substrates for the system and / or include dedicated complementary metal-oxide-semiconductor (CMOS) or BiCMOS interfaces implemented on the same die A complete microsystem of circuits. Background technique [0002] Micro-electromechanical systems (MEMS)—sensors and actuators—are becoming increasingly important. Sensors like silicon pressure sensors, silicon accelerometers and silicon flow sensors are components of important industrial products. In the field of actuators, ink nozzles, fuel nozzles and micropumps made of single crystal silicon are now commercially available. More products are now being researched and are being introduced, including complete microsystems with sensors, ac...

Claims

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Application Information

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IPC IPC(8): B81B7/00H01L21/50
CPCH01L21/50B81C1/00269
Inventor 赫里克·贾克布森
Owner 森松诺尔公司
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