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Manganese doped negative temperature coefficient singlecrystalline silicon heat sensitive resistance

A technology of negative temperature coefficient and thermistor, which is applied in the direction of resistors with negative temperature coefficient, etc., to achieve the effect of simple process

Inactive Publication Date: 2005-05-25
XINJIANG TECHN INST OF PHYSICS & CHEM CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, these studies did not involve manganese compensatory doping, especially did not involve the use of the compensation behavior of variable-valence metal ions to prepare high B value / low resistance materials

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] Vacuum Diffusion:

[0032] a. Use p-type single crystal silicon with a resistivity of 0.1Ω·cm, grind silicon wafers with boron carbide with a particle size of 5 μm, use ultrasonic waves in deionized water to remove sand, wash with cold and hot deionized water, boil with aqua regia, and then use cold Wash with hot deionized water, then dehydrate with industrial ethanol;

[0033] b. Put the processed silicon wafer into a quartz tube with one end closed, and put 3 mg of metal manganese into it, vacuumize, and keep the vacuum degree of 1.33×10 -3 Above Pa, then seal;

[0034] c. Place the sealed quartz tube with metal manganese and silicon wafers in the constant temperature zone of the high-temperature diffusion furnace, and diffuse at a temperature of 800°C. The diffusion time is 60 minutes, and take out the quartz tube to cool;

[0035] d. For the diffused silicon wafer, use a boron carbide grinding disc with a particle size of 5 μm, use ultrasonic waves to remove sand,...

Embodiment 2

[0039] Coating Diffusion:

[0040] a. Use p-type single crystal silicon with a resistivity of 1Ω·cm, grind the silicon wafer with boron carbide with a particle size of 10μm, use ultrasonic waves in deionized water to remove sand, clean with cold and hot deionized water, boil with aqua regia, and then use hot and cold Wash with deionized water, then dehydrate with industrial ethanol;

[0041] b. Drop a manganese nitrate solution with a concentration of 40% on both sides of the silicon wafer, and dry it under an infrared lamp;

[0042] c. Put the dried silicon wafer in the quartz boat, push the quartz boat into the constant temperature zone of the high-temperature diffusion furnace, diffuse at a temperature of 1000°C, and take out the silicon wafer for a diffusion time of 40 minutes;

[0043] d. For the diffused silicon wafer, use a boron carbide grinding disc with a particle size of 5 μm, use ultrasonic waves to remove sand, soak in hydrogen fluoride for 5-10 minutes, wash wit...

Embodiment 3

[0047] Vacuum Diffusion:

[0048]a. Use p-type single crystal silicon with a resistivity of 5Ω·cm, grind the silicon wafer with boron carbide with a particle size of 15μm, use ultrasonic waves in deionized water to remove sand, wash with cold and hot deionized water, boil with aqua regia, and then use hot and cold Wash with deionized water, then dehydrate with industrial ethanol;

[0049] b. Put the processed silicon wafer into a quartz tube with one end closed, and put 20 mg of manganese metal into it, vacuumize and keep the vacuum degree of 1.33×10 -3 Above Pa, then seal;

[0050] c. Place the sealed quartz tube with metal manganese and silicon wafers in the constant temperature zone of the high-temperature diffusion furnace, and diffuse at a temperature of 1200°C. The diffusion time is 20 minutes, and take out the quartz tube to cool;

[0051] d. For the diffused silicon wafer, use a boron carbide grinding disc with a particle size of 5 μm, use ultrasonic waves to remove ...

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Abstract

This invention refers to manganese doped negative temperature coefficient monocrystalline silicon thermistor, wherein the manganese is doped into monocrystalline silicon by vacuum high temperature diffusion of metal manganese and manganese nitrate coating, the manganese atom forms deep donor level, monocrystalline silicon forms highly compensated semiconductor material, as temperature raising the deep donor level trapped carrier transits to conduction band resulting in material resistivity change and present heat sensitive property, the change of material constant B and normal resistance at 25 degree centigrade can be obtained by changing diffusion temperature and time.

Description

technical field [0001] The invention relates to a manganese (metal manganese or manganese salt) doped negative temperature coefficient single crystal silicon thermistor. Background technique [0002] Functional materials and sensor technology are one of the three major industries of information technology in my country. Negative temperature coefficient thermistor elements are the most important sensor technology, the most widely used, and the fastest growing type of sensor. It has been valued by all countries in the world and has formed an independent industry; The annual consumption is about 300-400 million sticks, while the current domestic annual production is about 150 million, and 60-70% of the domestic market is occupied by products from Japan, South Korea and the United States. It is estimated that by 2010, my country will become the world's largest production, application and sales of thermistors, and the domestic consumption will reach more...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01C7/04
Inventor 巴维真陈朝阳丛秀云张建
Owner XINJIANG TECHN INST OF PHYSICS & CHEM CHINESE ACAD OF SCI
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