30 results about "Normal resistance" patented technology

The invention discloses data gloves for function rehabilitation training and assessment of hands. Each data glove further comprises bent sensor groups which are arranged on the hand back side inside the each data glove in a packaged mode and flexible pressure sensor groups which are arranged on the palm side inside each data glove. The bent sensor groups are placed on finger joints, the pressure sensor groups are placed on the a plurality of key nodes where a hand is in contact with an object when the object is grabbed, and lead-out lines of the bent sensor groups and lead-out lines of the pressure sensor groups are packaged inside each data glove, collected to the outer side of a forearm via the hand back side, and connected with a subsequent hardware processing circuit. The data gloves for the function rehabilitation training and the assessment of the hands are strong in wearability and capable of collecting finger bending angle information and palm pressure information of the hands of a patient, the finger bending angle information and the palm pressure information are used in the hand function rehabilitation training under a virtual environment, and quantitative assessment results of a muscle force range from no joint movement to movement capable of resisting normal resistance can be given.

This invention belongs to semiconductor pressure sensor technosphere. The sensor includes pressure-sensing film that stressed zone stretched and supporting part around it. voltage dependent resistance lay in high-stress area that cross over pressure-sensing film, compose Wheatstone bridge, to convert pressure change to electrical signal; broken number of the described voltage dependent resistance perpendicular to pressure-sensing film's bound is greater than that parallel to pressure-sensing film bound, to meet shape of high stress region; resistance strip width of turnover section is greater than normal resistance strip width; processing ion implantation of high concentration at the same time to wane ohmic value of turnover section; the pressure-sensing film thickness-width ratio as far as possible large, to satisfy require of bound's high stress region width. The invention is at the condition of chip area reducing but line not reducing, utilize membrane outer region of high stress to increase stressed zone area, to advance sensor sensitivity and reduce numbers of rejects.

The invention discloses a tangential and normal resistance testing device and method for anchor chain and soil under an equivalent elastic boundary. The device comprises a supporting rack, a transmission device, an air pressure loading system, a test box, a vertical displacement applying part, a tangential anchor chain unit, a normal anchor chain unit and the like. By employing an equal rigidity spring to simulate the elastic boundary, the size of the test box can be reduced greatly in the condition that the boundary condition is affected, so that the materials can be saved effectively and theexperimental operating difficulty can be reduced effectively. Meanwhile, the device can integrate tangential and normal resistance tests, can measure the tangential and normal interactions of the anchor chain and the soil, and can provide important design parameters for calculating a buried fragment of an engineering anchor chain. The device and method have important reference meaning in a mooring system of an anchor point below the sea bottom mud face.

A superconducting magnet includes at least one superconducting coil and a quench protection circuit electrically coupled to said at least one coil in parallel. The circuit includes at least one quench heater assembly thermally coupled to the at least one coil, and at least one superconducting current limiter electrically connected in series with the at least one quench heater assembly. The superconducting current limiter has a superconducting state with zero resistance, and a normal state with a normal resistance to decrease an electric current flowing through the quench heater assembly.

The embodiment of the invention discloses a superconductive strip material surface layer, and the surface layer is provided with a mesh grid structure which is disposed on the surface of a superconductive strip material. The surface layer provided by the invention solves a technical problem that the steam layer generated by the surface when a superconductor is in a normal resistance state greatlyreduces the heat exchange efficiency between the superconductor and liquid nitrogen. In addition, the embodiment of the invention also discloses a superconductive strip material and a superconductivecoil.

This invention refers to manganese doped negative temperature coefficient monocrystalline silicon thermistor, wherein the manganese is doped into monocrystalline silicon by vacuum high temperature diffusion of metal manganese and manganese nitrate coating, the manganese atom forms deep donor level, monocrystalline silicon forms highly compensated semiconductor material, as temperature raising the deep donor level trapped carrier transits to conduction band resulting in material resistivity change and present heat sensitive property, the change of material constant B and normal resistance at 25 degree centigrade can be obtained by changing diffusion temperature and time.

Techniques and circuits for storing and retrieving data using spin-torque magnetic memory cells as anti-fuses are presented. Circuits are included to allow higher-magnitude voltages and currents to be applied to magnetic memory cells to intentionally break down the dielectric layer included the magnetic tunnel junction. Magnetic memory cells having a normal-resistance magnetic tunnel junction with an intact dielectric layer are used to store a first data state, and magnetic memory cells having a magnetic tunnel junction with a broken-down dielectric layer are used to store a second data state. Data can be stored in such a manner during wafer probe and then later read out directly or copied into other magnetic or non-magnetic memory on the device for use in operations after the device is included in a system.

The invention provides an automatic cleaning deduster with a butterfly-shaped crawler belt, comprising a decelerator 1, a cabinet 2, a base 3, a cindervalve 4, a dust barrel 5, an air-supply pipe 6, an electric cabinet 7 and an air discharging pipe 8. As shown in views, the upper part is the cabinet, and the lower is the base. The decelerator is arranged on the top of the cabinet for driving transmission shafts in the cabinet, filtration cloth is sleeved on a plurality of transmission shafts to form the butterfly-shaped crawler belt; a separator plate with an opening in the medium is arranged in the cabinet, and divides the cabinet into an air inlet chamber and an outlet chamber; a fixed row brush is installed at a proper position in the lower of the cabinet; and the electric cabinet is installed out of the cabinet. The base is used for supporting the cabinet, and also for fixing a dust bucket under the cabinet, and the lower of the dust bucket is connected with the cindervalve and the dust barrel. The deduster is a novel duster used in an industrial dedusting flow, and has advantages of large treatment wind amount, high dedusting efficiency, small resistance, long using period (one to more years), and maintenance-free, and can continuously and stably run in a normal resistance range.

A semiconductor device is mounted on a package substrate which has a power supply line and a signal line formed of a normal or predetermined resistance material layer on a dielectric layer. A resistance material layer has a high resistance as compared with the normal resistance material layer and is additionally provided on the surface of the normal resistance material layer of the peripheral face of the signal line closest to the power supply line.

The invention discloses a high-stability thermistor manufacturing process which comprises the following steps: firstly, manufacturing an inner layer on a thermistor material, performing laser treatment on a side of a gong groove, pressing a prepreg with a copper foil, filling the gong groove with a resin, further performing laser treatment on the other side of the gong groove, pressing the prepregwith the copper foil, filling the gong groove with the resin, wrapping a thermistor inside the gong groove completely, and finally performing patterning, thereby obtaining a finished product of the thermistor. By adopting the high-stability thermistor manufacturing process, the thermistor is manufactured in modes that groove holes are formed through laser and mechanical means and the resin is repeatedly pressed and supplied, the thermistor is surrounded by the resin, very high reliability and stability are achieved, the characteristics that the resistance of a thermistor plate is increased incase of heat and large current and normal resistance is recovered after the heat and the current are recovered are met, then relatively high market requirements are met, and product diversity is achieved.

The invention provides a resistance switch memory based on organic ferroelectric P (VDF-TrFE) film. The resistance switch memory comprises a substrate, a variable-resistance dielectric layer on the substrate and an electrode film on the variable-resistance dielectric layer. The variable-resistance dielectric layer is a P (VDF-TrFE) film. The invention also provides a method for preparing the resistance switch memory. By controlling the sol-gel preparation, spin-coating speed and annealing conditions, a resistance switch memory with excellent performance can be obtained. The main growth conditions related to the invention are: selection of solvent, stirring speed and temperature, standing time, spin-coating speed, a substrate, and annealing time and conditions. Compared with a normal resistance switch, the resistance switch memory is characterized by big resistance variation, circulation and excellent fatigue performance. Raw materials required for preparation of the P (VDF-TrFE) film are simple; the preparation operation is convenient and easy to control; crystallization of the product is good; preparation temperature is low; and the P (VDF-TrFE) film is nontoxic, environmentally-friendly, and suitable for large-scale production and can be widely used for electronic devices, especially for resistance switch memories.

The invention provides a furrow opener overload protection device, and relates to the technical field of agricultural machinery. The furrow opener overload protection device comprises a furrow opener and a mounting seat, wherein the mounting seat comprises a base capable of being fixed on a rack, a rotary sleeve lever, a hook lever and a spring; the furrow opener is mounted on a power arm under the rotary sleeve lever; a shaft is arranged on a resisting arm above the rotary sleeve lever; an inclined plane hook is arranged at a power arm end under the hook lever and is matched with the shaft; a resisting arm end above the hook lever is connected with the spring. The furrow opener overload protection device provided by the invention overcomes defects in the prior art; the furrow opener not only can ensure normal work under normal resistance when the furrow opener works in a no-tillage hard land, but also can cut off load borne by the furrow opener when the furrow opener encounters abnormal resistance and before the furrow opener is damaged by the abnormal resistance so as to achieve a purpose of protecting the furrow opener.

The method to prepare corrosion-resist high-resistance supermagnetostrictive material with axial preferred orientation comprises: adding Si into Tb-Dy-Fe material to improve its normal resistance and corrosion-resist performance; in directional solidification, using the floating zone method with directional solidification speed 240mm/h-900mm/h and temperature gradient 500-900Deg/cm at 1500-1900Deg to prepare the material. In 400mT additional magnetic field and 10MPa prestress, this material has magnetostriction up to 1100-1700ppm and corrosion resistance improved 2-8% in 3.5% NaCl solution.