30 results about "Normal resistance" patented technology

The invention relates to a superconducting magnet and a superconducting magnet system. The superconducting magnet comprises a superconducting coil and a quenching protection circuit which is connected with the superconducting coil in parallel, wherein the quenchinging protection circuit comprises a quenching heater group which is in heat coupling with the superconducting coil and a superconducting current limiter which is connected with the quenching heater group in series, the superconducting current limiter has a superconducting state with a resistance value being zero and an impedance state with a normal resistance value, and is used for limiting the current flowing through the quenching heater group.

A superconducting magnet includes at least one superconducting coil and a quench protection circuit electrically coupled to said at least one coil in parallel. The circuit includes at least one quench heater assembly thermally coupled to the at least one coil, and at least one superconducting current limiter electrically connected in series with the at least one quench heater assembly. The superconducting current limiter has a superconducting state with zero resistance, and a normal state with a normal resistance to decrease an electric current flowing through the quench heater assembly.

The present invention is squeeze preventing automobile window driving system and control method, and relates to squeeze preventing automobile window driving technology. The system includes one microprocessor circuit, one intelligent feedback power chip, one multiway switch detection interface circuit, one window top touch switch, one test switch, one window bottom touch switch, one window ascent switch and one window descent switch connected together. The control method includes the following steps: for the microprocessor circuit to detect braking current value for N times and normal resistance current value for N times and to store the calculated threshold value in a flash memory; to compare with the reference current value in the flash memory, and to rotate the motor inversely to execute the squeeze preventing function if the calculated threshold value is greater. The present invention has high antipinching precision and capacity of automatically updating threshold value with operation of the automobile window.

The semiconductor device includes a termination control unit configured to generate a termination enable signal and termination resistance information in response to termination activation information, dynamic activation information, normal resistance information, and dynamic resistance information wherein the termination enable signal is activated when a delay lock loop is inactivated, and a termination unit configured to be controlled in response to the termination enable signal and terminate an interface pad by using a resistance value determined by the termination resistance information.

The invention discloses a thermal treatment method for a railway wagon sliding chute wearing plate and a side frame column wearing plate. The thermal treatment method is characterized by comprising at least the following steps of: (1) heating: tidily placing the wearing plates in a loading frame, and heating in a normal resistance furnace, wherein the heating temperature is 20-30 DEG C higher than that of the normal process, full fusion of total elements in a workpiece into a matrix structure is facilitated, and uniform and consistent hardness after quenching is guaranteed; (2) quenching in a nitrate bath tank of 260-300 DEG C other than in conventional water or oil, wherein the formula of a nitrate bath comprises 50 percent of potassium nitrate and 50 percent of sodium nitrate respectively; and adding 1-5 percent of water before quenching according to different materials and sizes of the wearing plates, wherein the isothermal cooling time in the nitrate bath tank is 45-90 minutes according to different sizes of the wearing plates; (3) taking the workpiece out of the nitrate bath tank, draining the residual nitrate bath and cleaning residual salt in hot water; and (4) checking hardness and deformation of the workpiece and performing tempering treatment if the hardness is high.

This invention belongs to semiconductor pressure sensor technosphere. The sensor includes pressure-sensing film that stressed zone stretched and supporting part around it. voltage dependent resistance lay in high-stress area that cross over pressure-sensing film, compose Wheatstone bridge, to convert pressure change to electrical signal; broken number of the described voltage dependent resistance perpendicular to pressure-sensing film's bound is greater than that parallel to pressure-sensing film bound, to meet shape of high stress region; resistance strip width of turnover section is greater than normal resistance strip width; processing ion implantation of high concentration at the same time to wane ohmic value of turnover section; the pressure-sensing film thickness-width ratio as far as possible large, to satisfy require of bound's high stress region width. The invention is at the condition of chip area reducing but line not reducing, utilize membrane outer region of high stress to increase stressed zone area, to advance sensor sensitivity and reduce numbers of rejects.

The invention discloses a high-stability thermistor manufacturing process which comprises the following steps: firstly, manufacturing an inner layer on a thermistor material, performing laser treatment on a side of a gong groove, pressing a prepreg with a copper foil, filling the gong groove with a resin, further performing laser treatment on the other side of the gong groove, pressing the prepregwith the copper foil, filling the gong groove with the resin, wrapping a thermistor inside the gong groove completely, and finally performing patterning, thereby obtaining a finished product of the thermistor. By adopting the high-stability thermistor manufacturing process, the thermistor is manufactured in modes that groove holes are formed through laser and mechanical means and the resin is repeatedly pressed and supplied, the thermistor is surrounded by the resin, very high reliability and stability are achieved, the characteristics that the resistance of a thermistor plate is increased incase of heat and large current and normal resistance is recovered after the heat and the current are recovered are met, then relatively high market requirements are met, and product diversity is achieved.

A semiconductor device is mounted on a package substrate which has a power supply line and a signal line formed of a normal or predetermined resistance material layer on a dielectric layer. A resistance material layer has a high resistance as compared with the normal resistance material layer and is additionally provided on the surface of the normal resistance material layer of the peripheral face of the signal line closest to the power supply line.

This invention refers to manganese doped negative temperature coefficient monocrystalline silicon thermistor, wherein the manganese is doped into monocrystalline silicon by vacuum high temperature diffusion of metal manganese and manganese nitrate coating, the manganese atom forms deep donor level, monocrystalline silicon forms highly compensated semiconductor material, as temperature raising the deep donor level trapped carrier transits to conduction band resulting in material resistivity change and present heat sensitive property, the change of material constant B and normal resistance at 25 degree centigrade can be obtained by changing diffusion temperature and time.

The invention relates to a device and method for quickly testing and evaluating the quality of a storage battery. The storage battery is a battery pack composed of multiple single cells connected in series. The battery pack is further divided into a plurality of adjacent single cells. A battery group formed in series; the device includes a main control module and a plurality of battery detection modules communicating with it; each battery detection module is connected to a battery group in the battery group to obtain the measured value of the performance parameter of each battery group; The main control module is used to compare the measured value of the performance parameter of each battery group with the normal value of the performance parameter corresponding to the number of single batteries of the battery group, and when the measured value of the ohmic resistance is greater than the normal value, and the When the measured value of the capacitance is less than its normal value, it is determined that there is an abnormal battery in the battery group. The invention has the characteristics of fast detection speed and low cost, and can be applied to battery monitoring in power substations, communication base stations, UPS in machine rooms and the like.

The invention relates to a worn-out power battery secondary use screening method. The whole of a battery pack is charged and discharged, through data recorded by the BMS in a test, in the discharging process, 2 to 4 SOC points with the SOC value ranging from 20% to 90% are selected, and voltage of each monomer in series is read; the batteries which are deviated from most of the batteries and overpass 5% in the voltage value are determined to be batteries of problems, and the residual batteries are initially identified as batteries in healthy states; internal resistance of each battery in the residual batteries is measured, a second screening is conducted through the inner resistance value, battery cells which deviate from normal resistance of the most battery cells by 20% are eliminated and the screening is finished; 10 batteries are randomly selected from the residual batteries to be charged and discharged, the average capacity of the 10 batteries is deemed as the capacity value of all the batteries in the healthy states. Compared with the detection method of the prior art, times of charging and discharging are greatly reduced, time needed by the new screening method is about 1 / 10 less than the traditional method, quantity demand for charging and discharging devices is greatly reduced, and equipment investment is reduced.