30 results about "Normal resistance" patented technology

The invention relates to a superconducting magnet and a superconducting magnet system. The superconducting magnet comprises a superconducting coil and a quenching protection circuit which is connected with the superconducting coil in parallel, wherein the quenchinging protection circuit comprises a quenching heater group which is in heat coupling with the superconducting coil and a superconducting current limiter which is connected with the quenching heater group in series, the superconducting current limiter has a superconducting state with a resistance value being zero and an impedance state with a normal resistance value, and is used for limiting the current flowing through the quenching heater group.

A superconducting magnet includes at least one superconducting coil and a quench protection circuit electrically coupled to said at least one coil in parallel. The circuit includes at least one quench heater assembly thermally coupled to the at least one coil, and at least one superconducting current limiter electrically connected in series with the at least one quench heater assembly. The superconducting current limiter has a superconducting state with zero resistance, and a normal state with a normal resistance to decrease an electric current flowing through the quench heater assembly.

The semiconductor device includes a termination control unit configured to generate a termination enable signal and termination resistance information in response to termination activation information, dynamic activation information, normal resistance information, and dynamic resistance information wherein the termination enable signal is activated when a delay lock loop is inactivated, and a termination unit configured to be controlled in response to the termination enable signal and terminate an interface pad by using a resistance value determined by the termination resistance information.

The invention discloses a high-stability thermistor manufacturing process which comprises the following steps: firstly, manufacturing an inner layer on a thermistor material, performing laser treatment on a side of a gong groove, pressing a prepreg with a copper foil, filling the gong groove with a resin, further performing laser treatment on the other side of the gong groove, pressing the prepregwith the copper foil, filling the gong groove with the resin, wrapping a thermistor inside the gong groove completely, and finally performing patterning, thereby obtaining a finished product of the thermistor. By adopting the high-stability thermistor manufacturing process, the thermistor is manufactured in modes that groove holes are formed through laser and mechanical means and the resin is repeatedly pressed and supplied, the thermistor is surrounded by the resin, very high reliability and stability are achieved, the characteristics that the resistance of a thermistor plate is increased incase of heat and large current and normal resistance is recovered after the heat and the current are recovered are met, then relatively high market requirements are met, and product diversity is achieved.

This invention refers to manganese doped negative temperature coefficient monocrystalline silicon thermistor, wherein the manganese is doped into monocrystalline silicon by vacuum high temperature diffusion of metal manganese and manganese nitrate coating, the manganese atom forms deep donor level, monocrystalline silicon forms highly compensated semiconductor material, as temperature raising the deep donor level trapped carrier transits to conduction band resulting in material resistivity change and present heat sensitive property, the change of material constant B and normal resistance at 25 degree centigrade can be obtained by changing diffusion temperature and time.

The invention relates to a device and method for quickly testing and evaluating the quality of a storage battery. The storage battery is a battery pack composed of multiple single cells connected in series. The battery pack is further divided into a plurality of adjacent single cells. A battery group formed in series; the device includes a main control module and a plurality of battery detection modules communicating with it; each battery detection module is connected to a battery group in the battery group to obtain the measured value of the performance parameter of each battery group; The main control module is used to compare the measured value of the performance parameter of each battery group with the normal value of the performance parameter corresponding to the number of single batteries of the battery group, and when the measured value of the ohmic resistance is greater than the normal value, and the When the measured value of the capacitance is less than its normal value, it is determined that there is an abnormal battery in the battery group. The invention has the characteristics of fast detection speed and low cost, and can be applied to battery monitoring in power substations, communication base stations, UPS in machine rooms and the like.