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Resistance switch memory based on organic ferroelectric film and preparation method thereof

A technology of resistive switch and organic iron, which is applied in the direction of electrical components and the like, can solve the problems such as the lack of effective breakthrough of organic resistive memory, restricting the diversified development of memory devices, etc., and achieves the preparation method is simple and easy to operate, low in cost, and simple in raw materials. Effect

Active Publication Date: 2016-12-21
HARBIN INST OF TECH SHENZHEN GRADUATE SCHOOL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there has been no effective breakthrough in organic resistive memory.
Although resistive memory, which has been studied more and more, has excellent performance, most of the resistive characteristics are only found in inorganic materials, which seriously restricts the diversified development of memory devices.

Method used

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  • Resistance switch memory based on organic ferroelectric film and preparation method thereof
  • Resistance switch memory based on organic ferroelectric film and preparation method thereof
  • Resistance switch memory based on organic ferroelectric film and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] Dissolve the P(VDF-TrFE) particles with a substance molar ratio of 70:30 in a butanone solution, prepare a solution with a concentration of 20%, and stir at a constant temperature of 70°C on a magnetic stirrer for 7 hours to make the P(VDF-TrFE ) particles are fully dissolved in the methyl ethyl ketone solvent, and finally the solution is placed in a light-shielding environment and allowed to stand for 24 hours. The used substrate of the spin-coated film is grown on a silicon wafer with a layer of 50nm conductive Pt. The spin-coating rate when spinning the glue is 2500r / min, and the spin-coating time is 40s. The obtained film was pre-fired at 90°C for 10 minutes, and the solvent was evaporated. In order to make the film better crystallized, it was placed in a temperature control box, vacuumed to 10Pa, and heat-treated at 120°C for 10 hours. Naturally cool to room temperature. A 30nm gold film was vapor-deposited on the surface of the well-crystallized film as the top ...

Embodiment 2

[0024] Dissolve the P(VDF-TrFE) particles with a substance molar ratio of 70:30 in a butanone solution, prepare a solution with a concentration of 20%, and stir at a constant temperature of 70°C on a magnetic stirrer for 7 hours to make the P(VDF-TrFE ) particles are fully dissolved in the methyl ethyl ketone solvent, and finally the solution is placed in a light-shielding environment and allowed to stand for 24 hours. The used substrate of the spin-coated film is grown on a silicon wafer with a layer of 50nm conductive Pt. The spin-coating rate when spinning the glue is 2500r / min, and the spin-coating time is 40s. The obtained film was pre-fired at 80°C for 10 minutes, and the solvent was evaporated. In order to make the film better crystallized, it was placed in a temperature control box, vacuumed to 10Pa, and heat-treated at 135°C for 10 hours. Naturally cool to room temperature. A 30nm gold film was vapor-deposited on the surface of the well-crystallized film as the top ...

Embodiment 3

[0026] Dissolve the P(VDF-TrFE) particles with a molar ratio of 70:30 in diethyl carbonate solution to prepare a solution with a concentration of 20%, and stir at a constant temperature of 60°C on a magnetic stirrer for 7h to make P(VDF -TrFE) particles were fully dissolved in diethyl carbonate solvent, and finally the solution was placed in a light-shielding environment for 24 hours. The substrate used for the spin-on thin film is grown on a silicon wafer with a layer of 50nm Pt. The spin-coating rate when spinning the glue is 2000r / min, and the spin-coating time is 40s. The obtained film was pre-fired at 90°C for 10 minutes, and the solvent was evaporated. In order to make the film better crystallized, it was placed in a temperature control box, vacuumed to 10Pa, and heat-treated at 140°C for 10 hours. Naturally cool to room temperature. A 30nm gold film was vapor-deposited on the surface of the well-crystallized film as the top electrode. Through the electrical performan...

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Abstract

The invention provides a resistance switch memory based on organic ferroelectric P (VDF-TrFE) film. The resistance switch memory comprises a substrate, a variable-resistance dielectric layer on the substrate and an electrode film on the variable-resistance dielectric layer. The variable-resistance dielectric layer is a P (VDF-TrFE) film. The invention also provides a method for preparing the resistance switch memory. By controlling the sol-gel preparation, spin-coating speed and annealing conditions, a resistance switch memory with excellent performance can be obtained. The main growth conditions related to the invention are: selection of solvent, stirring speed and temperature, standing time, spin-coating speed, a substrate, and annealing time and conditions. Compared with a normal resistance switch, the resistance switch memory is characterized by big resistance variation, circulation and excellent fatigue performance. Raw materials required for preparation of the P (VDF-TrFE) film are simple; the preparation operation is convenient and easy to control; crystallization of the product is good; preparation temperature is low; and the P (VDF-TrFE) film is nontoxic, environmentally-friendly, and suitable for large-scale production and can be widely used for electronic devices, especially for resistance switch memories.

Description

technical field [0001] The invention relates to the technical field of switch memory, in particular to a resistive switch memory based on an organic ferroelectric thin film and a preparation method thereof. Background technique [0002] In recent years, RRAM, as a new type of non-volatile memory, has attracted extensive attention from academia and industry. This kind of memory has the advantages of fast storage speed, low power consumption, simple structure, and high-density integration. General memory. [0003] The resistive switching characteristic was first discovered by Hickmott et al. in 1962, but it was not until 2000, when the Ignatiev research group discovered the resistive switching characteristic of the oxide film, that people focused their attention on this very valuable characteristic. Resistive switches exist in many materials, such as perovskite materials, organic materials, amorphous silicon, metal oxide materials, etc. At present, more studies are made on ...

Claims

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Application Information

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IPC IPC(8): H01L45/00
CPCH10N70/881H10N70/021
Inventor 刘向力王成迁
Owner HARBIN INST OF TECH SHENZHEN GRADUATE SCHOOL
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