Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Erosion resistant pattern forming method, micro-pattern forming method using the same

A technology for resist patterning and micropatterning, applied in microlithography exposure equipment, instruments, electrical components, etc., can solve the problems of difficulty in resist patterning, difficulty in maintaining shapes with different thicknesses, deterioration in heat resistance, etc. The number of engraving steps, the effect of excellent etching resistance and good heat resistance

Inactive Publication Date: 2005-06-22
TOKYO OHKA KOGYO CO LTD
View PDF0 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0022] However, even if such a step-shaped resist pattern is formed using a resist material preferred in conventional liquid crystal display element production, it is difficult to achieve such a method because the etching resistance and heat resistance are not sufficient.
[0023] Specifically, as described above, because the step-shaped resist pattern is used as an etching mask before and after deformation, it is required to have high etching resistance, but forming such a resist pattern with high etching resistance Stepped resist patterns are more difficult
[0024] In addition, in order to make the resist pattern used in the manufacture of liquid crystal display elements withstand the etching process and injection process, post-baking treatment is sometimes performed to improve heat resistance, but the preferred resist in the conventional manufacture of liquid crystal display elements The reverse side of the material is cheap and highly sensitive, and the heat resistance tends to deteriorate, so the step-shaped resist pattern is flawed by the post-baking process, making it difficult to maintain the shape with different thicknesses

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Erosion resistant pattern forming method, micro-pattern forming method using the same
  • Erosion resistant pattern forming method, micro-pattern forming method using the same
  • Erosion resistant pattern forming method, micro-pattern forming method using the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0156] Prepare a positive photoresist composition.

[0157] Preparation (A) component: Cresol novolac resin [Weight average molecular weight (Mw) obtained by condensation reaction of mixed phenols of m-cresol / p-cresol=4 / 6 (molar ratio) and formaldehyde by conventional methods =5000 resin] 100 parts by mass, component (B): [bis(2,3,5-trimethyl-4-hydroxyphenyl)-2-hydroxyphenylmethane] 10 parts by mass, component (C): [Esterification reaction product of 1 mol of 2,3,4,4'-tetrahydroxybenzophenone and 2.34 mol of 1,2-naphthoquinonediazide-5-sulfonyl chloride] 29.7 parts by mass, (D) component: [PGMEA] 430 parts by mass, after uniformly dissolving the above-mentioned components (A) to (D), as a surfactant, 400 ppm of BYK-310 (manufactured by Bikchemi) was blended, and the above-mentioned substances were filtered using a membrane filter with a pore size of 0.2 μm. Prepare a positive photoresist composition.

[0158] Using a resist coating device [TR-36000 (manufactured by Tokyo Ohka Kogy...

Embodiment 2

[0164] Using the same positive photoresist composition as in Example 1, the same steps as in Example were used to form a stepped resist pattern. Among them, the stepped resist pattern is formed into a convex cross-sectional shape, and its dimensions are as follows: the thickness of the thick part is 2.0 μm, the thickness of the thin part is 0.8 μm, the entire width is 13 μm, and the width of the thin part is 5μm.

[0165] The results of evaluating the heat resistance, dry etching resistance, and wet etching resistance of this stepped resist pattern are shown in Table 1 below.

Embodiment 3

[0167] After forming a stepped resist pattern in the same manner as in Example 1, on the other hand, a post-baking treatment was performed at 130°C for 300 seconds.

[0168] The results of evaluating the heat resistance, dry etching resistance, and wet etching resistance of the step-shaped resist pattern after the post-baking treatment are shown in Table 1 below.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

PROBLEM TO BE SOLVED: To form a step-like resist pattern with excellent etching durability and heat resistance. SOLUTION: The method for forming a resist pattern includes steps of: (A) forming a photoresist film on a substrate 10; (B) patterning the photoresist film into a pattern having a thick part r1 and a thin part r2 by way of photolithographic process including selective exposure; and (C) curing the resist with UV rays after patterning to form a step-like resist pattern R having the thick part r1 and the thin part r2. COPYRIGHT: (C)2005,JPO&NCIPI

Description

Technical field [0001] The present invention relates to a method for forming a resist pattern, a method for forming a fine pattern using the method, and a method for manufacturing a liquid crystal display element. Background technique [0002] In the manufacture of the liquid crystal array substrate of the liquid crystal display element, a photolithography process using a photoresist film is used. [0003] Figure 2 ~ Figure 15 Means manufacturing Figure 16 A diagram showing an example of the process of the α-Si (amorphous silicon dioxide) type TFT array substrate of the structure shown. In this example, first as figure 2 As shown, a gate electrode layer 2'is formed on the glass substrate 1. [0004] Next, a photoresist film is formed on the gate electrode layer 2', and the photoresist film is patterned by a photolithography method. The photolithography method includes a step of selectively performing exposure through a mask, such as image 3 As shown, a resist pattern R1 is f...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G03F7/40G02F1/133G02F1/136G03F7/20H01L21/00H01L21/306H01L21/3065H01L21/336H01L29/786
CPCG03F7/36H01L21/0274H01L27/1288
Inventor 森尾公隆
Owner TOKYO OHKA KOGYO CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com