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Manufacturing method of induction element and its structure

A technology of inductance components and manufacturing methods, which is applied in the fields of electrical components, inductance/transformer/magnet manufacturing, semiconductor/solid-state device manufacturing, etc., can solve the problem that the Q value of the inductance component cannot be further improved, the metal wire layer pattern cannot be made, and the inductance component is close to Silicon substrate and other problems, to achieve the effect of increasing the Q value, reducing the contact resistance, and reducing the resistance value

Active Publication Date: 2005-08-24
UNITED MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] Moreover, most of the inductance components are arranged under the protective layer of the chip, so the inductance components are very close to the silicon substrate (less than 10 μm), therefore, the silicon substrate will become a conductor at high frequencies using high-frequency components , and consume a lot of energy, making the quality of inductive components degrade
[0008] Moreover, although the known technology proposes to form a three-dimensional inductance element composed of metal wires / vias / metal wires through the metal interconnection process, however, the inductance element also has the problem of being too close to the silicon substrate. The layer window layer is limited by the process and cannot be made into a pattern similar to the metal wire layer, but only a large number of plugs can be formed to connect the upper and lower metal wire layers, so the Q value of the inductance element cannot be further improved

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  • Manufacturing method of induction element and its structure
  • Manufacturing method of induction element and its structure
  • Manufacturing method of induction element and its structure

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no. 1 example

[0041] figure 1 is a schematic top view showing a structure for forming an inductance element according to the first embodiment of the present invention; Figure 2A to Figure 2C yes means figure 1 The sectional schematic diagram of the production process of I-I′ in the middle; Figure 3A to Figure 3C yes means figure 1 The cross-sectional schematic diagram of the manufacturing process from II-II′, in which figure 1 The areas marked 101, 103, and 105 in the Figure 2A to Figure 2C and Figure 3A to Figure 3C correspond to each other, and the area 105 indicates the overlapping portion of the area 101 and the area 103 . And in this embodiment, it discloses a symmetrical circular spiral inductance element, and the inductance element has a cross overlapping area.

[0042] Also refer to figure 1 , Figure 2A and Figure 3A Firstly, the manufacture of the inductance element is to provide a substrate 100, on which at least a dielectric layer 102 is formed, and its material is...

no. 2 example

[0065] Figure 5 is a schematic top view showing the structure of an inductance element according to the second embodiment of the present invention; Figure 6A to Figure 6C yes means Figure 5 The sectional schematic diagram of the production process of III-III' in the middle. And in this embodiment, it is disclosed as a concentric spiral inductance element.

[0066] Also refer to Figure 5 and Figure 6A , the manufacture of the inductance element is first to provide a substrate 200, and then at least a dielectric layer 202 is formed on the substrate 200, wherein the material is such as silicon oxide, silicon nitride, low dielectric constant material, etc. The material is formed by, for example, first depositing the dielectric layer 202 on the substrate 200 by chemical vapor deposition, and then performing a planarization step by chemical mechanical polishing. It is well known to those skilled in the art that the dielectric layer 202 may have a multi-layer structure, and...

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Abstract

This invention discloses a method for making inductive component and its structure. This inductance component is on the underlay of the framework, which has flattened dielectric layer. This inductive structure includes the first inductive graph, the second and the third inductive graphs, there into, the first inductive graph is set on the dielectric layer. In addition, the second inductive graph is on the first inductive graph, and the second inductive graph connects the first inductive graph. In addition, the third inductive graph is set on and electrically connects the second inductive graph. And the first, the second and the third graphs have the similar patterns. Therefore, the inductive component uses multi-layered inductive graphs to add its thickness to reduce the impedance of the inductive component.

Description

technical field [0001] The present invention relates to a manufacturing method and structure of a semiconductor element, and in particular to a manufacturing method and structure of an inductance element. Background technique [0002] In an integrated circuit, an inductance element is an important element, and the style of these inductance elements is generally a circular or square helical metal coil, and the application range of these inductance elements can be said to be quite wide. For the application field of high frequency, it has higher requirements on the quality of the inductance element, which means that the inductance element used in this field has a higher Q value. For example, in the application of wireless communication, the Q value of the inductance element must reach about 60. The definition of the above Q value is as follows: [0003] Q=ω 0 L / R (1) [0004] where ω 0 is the resonant angular frequency of the inductance element, R is the resistance of the ...

Claims

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Application Information

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IPC IPC(8): H01F17/00H01F41/00H01L21/02H01L21/82H01L27/01
Inventor 洪建州曾华洲许村来范政文秦嘉鸿林俊仪
Owner UNITED MICROELECTRONICS CORP