Hybrid integrated tunable semiconductor laser

Abstract

This invention is a compound tunable semiconductor laser, including a substrate with locating groove etched on it; a laser in the location groove; a spinal wave-guide etched on the substrate, and there is circle rectangle groove on the spinal wave-guide; a Prague grating forms through the cycle rectangle groove on the spinal wave-guide, the Prague grating and the laser use automatic collimation method to couple each other; an electrode forms on the Prague grating, this electrode is a heating electrode and utilizes heat luminous effect to change the reflecting wave length of the Prague grating; a thermistor with minus temperature coefficient on the substrate; a V-shaped groove is on one end of the substrate to fix the fiber.

Description

technical field

[0001] The invention relates to a tunable laser, in particular to a narrow line width tunable light source-hybrid integrated tunable semiconductor laser used in the optical communication field. Background technique

[0002] There are currently several technologies for realizing tunable semiconductor lasers. The main method is to change the wavelength of the frequency-selective components in the laser to realize the wavelength tuning function. It mainly includes monolithic integrated multi-electrode lasers, such as tunable DBR lasers, sampling grating lasers, superstructure grating lasers, etc., making gratings of various structures at one end of the semiconductor active dielectric waveguide, and heating in the grating area. The most important thing is that the method of current injection changes the effective refractive index of the grating region, thus changing the wavelength of the feedback oscillation. The other type is the external cavity laser, such as ...

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