Semiconductor device and method of fabricating the same
A manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, transistors, etc., can solve problems such as different mobility, uneven characteristics, and degradation of thin-film transistor characteristics
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no. 1 approach
[0049] First refer to figure 1 as well as figure 2 , the semiconductor device including the thin film transistor obtained according to the first embodiment will be described. again, in figure 2 In , one of the groups in which the effects of the present invention can be obtained is shown as an example.
[0050] On the semiconductor device including the thin film transistor of the first embodiment, such as figure 1 As shown, a Mo film 2 having a thickness of about 50 nm and having a higher melting point than silicon is formed on a quartz substrate 1 . On the other hand, the quartz substrate 1 is an example of the "substrate" of the present invention, and the Mo film 2 is an example of the "absorbing film" of the present invention. On the Mo film 2, SiO with a thickness of about 80 nm is formed. 2 Insulating film 3 composed of film. Form SiN with a thickness of about 20 nm and a contact angle with molten silicon of about 45° or less on the insulating film 3 x T...
no. 2 approach
[0089] refer to Figure 12 , In this second embodiment, unlike the first embodiment described above, a description will be given of a case where the polysilicon film constituting the active layer of the thin film transistor is irradiated with laser light from the reflection side of the substrate.
[0090] On the semiconductor device including the thin film transistor of the second embodiment, as Figure 12 As shown, on a quartz substrate 41, SiO with a thickness of about 600 nm is formed. 2 composed of an insulating film 42 . And the quartz substrate 41 is an example of the "substrate" of the present invention. On the insulating film 42, a SiN substrate with a thickness of about 20 nm and a contact angle with molten silicon of about 45° or less is formed. x Composition of the insulating film 43. In a predetermined region on the insulating film 43 , a plurality of polysilicon films 44 constituting the active layer of the n-type thin film transistor 40 are formed in a...
no. 3 approach
[0114] refer to Figure 19 as well as Figure 20 , In this third embodiment, unlike the crystallization of the semiconductor layer in the above-mentioned first and second embodiments, the crystal grain size of the upper wiring layer and the lower wiring layer is increased by irradiation of laser light. illustrate.
[0115] As the manufacturing process of the third embodiment, first as Figure 19 As shown, a Mo film (lower wiring layer) 62 of a refractory metal with a thickness of approximately 50 nm to 500 nm is formed in a predetermined area on a quartz substrate 61 by using DC magnetron sputtering to form an island shape. change. Then, using the plasma CVD method, in the same way as covering the Mo film 62, a layer made of SiO 2 film or SiN x After forming an interlayer insulating film 63 composed of a Mo film, a contact hole 63 a reaching the Mo film 62 is formed on the interlayer insulating film 63 . Next, using the DC magnetron sputtering method, on the int...
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Abstract
Description
Claims
Application Information
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