Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Process for preparing one-dimensional nano tin dioxide material

A nano-tin dioxide, raw material technology, applied in tin oxide, nanotechnology, nanotechnology and other directions, can solve problems such as no one-dimensional structure nano SnO2 material research report and other problems, achieve low cost of raw materials and equipment, simple preparation process , the effect of mild reaction conditions

Inactive Publication Date: 2006-01-25
UNIV OF ELECTRONIC SCI & TECH OF CHINA
View PDF0 Cites 35 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] So far, no one-dimensional structured nano-SnO has been prepared by the sol-gel method. 2 Materials Research Reports

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Process for preparing one-dimensional nano tin dioxide material
  • Process for preparing one-dimensional nano tin dioxide material
  • Process for preparing one-dimensional nano tin dioxide material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0029] Analytical grade SnCl 4 ·5H 2 O is dissolved in distilled water (the pH value is adjusted to 1-2 with hydrochloric acid or citric acid to prevent hydrolysis), and a solution with a concentration of 0.5 mol / 1 is prepared. 28% ammonia solution, control the drop rate to be about 1ml / min, until the pH of the solution is about 7-8 to form a precipitate. The precipitate was washed by centrifugation to remove chloride ions (with 0.5mol / 1 AgNO 3 Solution test), add oxalic acid solution to adjust the pH value to 1-2, ultrasonically disperse, heat up to about 50 ℃ under vigorous stirring to form a sol, the sol is aged for 24-48h to form a gel, and the gel is dried at 100 ℃ for 5-8h , 250℃-500℃ resistance furnace sintering for 0.5-1h to obtain the target product. The phase of the sample was analyzed by XRD, the morphology of the sample was analyzed by transmission electron microscope (TEM), the chemical composition of the sample was analyzed by X-ray electron spectroscopy (XPS)...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A process for preparing one-dimension nano-SnO2 material used for high-sensitivity gas sensor or transparent electrode includes such steps as preparing solution of SnCl4 * 5H2O, adding ammonia water, depositing, centrifugal washing for removing Cl ions, adding oxalic acid to generate sol, ageing to become gel, drying and sintering.

Description

technical field [0001] The invention belongs to the technical field of nano-oxide semiconductor materials, and particularly relates to a method for preparing one-dimensional SnO 2 Methods. Background technique [0002] SnO 2 It is a wide bandgap semiconductor material widely used as gas sensor. In addition, it also has some unique properties, such as high electrical conductivity, high transmittance, and good chemical and thermal stability. It is used in many technical fields, including solar cells, liquid crystal displays, photodetectors, protective coatings, etc. As nano SnO 2 Due to its large specific surface area and high activity, it has broad application prospects in gas sensing, electrical conductivity, and photosensitivity absorption. Recently, due to the unique physical properties and potential application prospects, attention has been paid to the one-dimensional structure of SnO 2 (Nanowires or nanoribbons) research is favored by people. It has been shown that...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C01G19/02B82B3/00
Inventor 刘春明祖小涛
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com