Production of laser of distributed Blatt reflective semiconductor with tuning wavelength
A technology of distributed Bragg and manufacturing methods, which is applied in the direction of semiconductor lasers, lasers, and laser components, etc., can solve the problems of difficult reflection at the docking interface, optical coupling loss, device function impact, and complicated device manufacturing process, etc., to eliminate optical absorption loss , easy to achieve, small reflection effect
Inactive Publication Date: 2006-03-15
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology
Butt growth adopts etching / re-growth technology, and different bandgap wavelength materials are realized in different epitaxy processes. The increased number of epitaxy complicates the device manufacturing process, and it is usually difficult to completely eliminate reflection and optical coupling losses at the docking interface; selective area growth Through the promotion of SiO2 dielectric film for MOCVD growth, different bandgap wavelengths are realized in different regions, but due to the lateral diffusion of the growth gas, there is a transition region greater than 30um between different bandgap wavelength regions, which has a certain impact on the device function. influences
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[0036] Please refer to the attached Figure 1-Figure 6 , a method for manufacturing a wavelength tunable distributed Bragg reflection laser of the present invention, comprising the following steps:
[0037] Step 1: Utilize MOCVD method on n-type InP substrate 1 and epitaxially lower confinement layer 2, multiple quantum wells 3, upper confinement layer 4, InP buffer layer 5 (such as figure 1 shown);
[0038] Step 2: Deposit a dielectric film 6, which is used to prevent phosphorous ions from being implanted into the gain region;
[0039] Step 3: Mask photolithography is used to make injection protection patterns, leaving the dielectric film 6 in the gain area, and etching the dielectric film 6 in the remaining areas (such as figure 2 shown);
[0040] Step 4: Perform P ion implantation on the surface of the epitaxial wafer, and then etch away the remaining dielectric film 6 on the surface, the function of which is to form point defects in the InP buffer layer in the waveguid...
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Abstract
The method includes following steps: lower limiting layer, multiple quantum well, upper limiting layer, InP buffer layer, depositing dielectric membrane are formed on n type InP substrate in turn; the injection protection pattern is made by mask etching, and the dielectric membrane is remained in gain area, and in other area the dielectric membrane is ate off; make P ion injection, and then eat off remained dielectric membrane; redeposit dielectric membrane on surface, and make rapid thermal anneal; eat off dielectric membrane and InP buffer layer; the grating is make on wave guiding area; etch block layer; make ridge waveguide structure to form waveguide; make mask photo etching to form trench-isolation. Largely deposit a SiO layer, and inject He ion to make trench-isolation to become high resistant region; the electrode window is opened at ridge bar, and sputter P side electrode; after thinning down, evaporate N side electrode in backside; make cleavage to acquire signal wavelength tunable distributed bragg reflection laser.
Description
technical field [0001] The invention relates to a manufacturing method of a semiconductor laser, in particular to a manufacturing method of a wavelength tunable distributed Bragg reflection semiconductor laser. Background technique [0002] Wavelength tunable semiconductor lasers are key devices in wavelength division multiplexing (WDM) optical communication systems and have broad application prospects. From the perspective of material properties, wavelength tunable semiconductor lasers require the integration of two materials with different bandgap wavelengths: for example, for a wavelength tunable distributed Bragg reflective semiconductor laser operating in the 1.55um low-loss optical fiber communication window, a bandgap wavelength of 1.55 um gain material and low loss waveguide material with bandgap wavelength less than 1.50um are planarly integrated. [0003] Currently, the methods for realizing the integration of materials with different bandgap wavelengths in differ...
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Inventor 张靖赵玲娟王圩
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI