High purity gallium nitride nanometer line preparation method

A gallium nitride nanowire and high-purity technology, which is applied in the field of preparation of high-purity gallium nitride nanowires, can solve the problems affecting the product purity and yield, the surface is not smooth enough, and the raw material ratio of the preparation method is not strict enough, etc.
CN1789114AInactive Publication Date: 2006-06-21TAIYUAN UNIV OF TECH
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
TAIYUAN UNIV OF TECH
Publication Date
2006-06-21
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention discloses a process for preparing a kind of gallium nitride nanoline of high purity, which employs gallium oxide (Ga2O3) as raw material, alkaline air (NH3) as reacting gas, inert gas argon gas (Ar) as protective gas, silicon board as base carrier for product growing, absolute ethyl alcohol, acetone and deionized water as cleaning agent for the sicicon board, and employs no accelerating agent; the gallium nitride nanoline grows out under the temperature of 950 Deg C and on the silicon board through ammonification reaction; the preparing process is simplified by grinding, sifting the raw material, cleaning the silicon board and quartz material, controlling the air extraction, argon gas and alkaline air inputting by tubing high temperature furnace control device procedurally, which prevents the side product generating effectively and increases the product outcome, purity and quality and finally getting the gallium nitride nanoline of light yellow, solid and in linary shape; the product is characterized by the uniform shape, order arrangement, and stable optical, chemical and physical property; the invention is characterized by the short preparing process, high yield (reaching to 95%), high purity (reaching to 98.6%) and the high linary accuracy, with the diameter being 5-20 cm, the average length of the monoline 30-50 ª–m.
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Description

technical field

[0001] The invention relates to a method for preparing high-purity gallium nitride nanowires, and belongs to the technical field of preparation and generation methods of inorganic compound semiconductor materials. Background technique

[0002] Nanowires and carbon nanotubes of semiconductor materials are raw materials for manufacturing nanoscale electronic and optical devices. Gallium nitride nanowires of one-dimensional III-V compounds have unique optical and electrical properties, and can be used in optoelectronic devices such as visible light and ultraviolet light It has broad application prospects, it is a wide straight bandgap semiconductor, high electron saturation drift speed, is one of the most superior materials for manufacturing blue light diodes and high-power optoelectronic devices.

[0003] In recent years, research on the preparation of inorganic compound gallium nitride nanowires has been mentioned as an important scientific research agenda. Th...

Claims

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