Formula of a glass ceramic material and preparation method

Abstract

The formulation and methods of glass-ceramic Substrate materials, which consisted essentially of the micro-powder SiO2 and the BSG materials containing four kinds of oxides:60-85wt úÑ SiO 2 ,15-35wt úÑ B 2 O 3 , 0.1-2.5wt úÑ K 2 O ú¼ 0.1-2.5wt%Na 2 O ,where the BSG materials occupied 55-90 wt% and SiO 2 occupied 10-45wt%.According to formulation, after the chemically pure SiO 2 , B 2 O 3 , K 2 O, Na 2 O were ball-milled, desiccated and mixed in the platinum crucible, the mixture was heat-preserved and stirred at a temperature between about 1300 and 1550 deg.C , which made its crystallochemical reaction sufficiently. After pouring the melt-out glass in crucible into the water to quench, offspring of transparent broken glass which had been hydroball-milled is gained as the glass dust to synthesize the BSG materials. In terms of formulation the BSG material and the chemically pure SiO 2 were ball-milled, blended and shaped granule finally. When reaction was carried out in a constant-temperature at 850-900 deg.C, the glass-ceramic Substrate materials were prepared as the above-indicated aspect of the invention. The capability index of the glass-ceramic substrate materials was: the dielectric constant ªŠ < 4(1 MHz), the dielectric losses tan ª€íœ 0.001 (1MHz), the insulation resistivity ªÐ í¦ 10 13 ª© cm, holdoff voltage Intensity E í¦ 5í‡10 7 V / m, the bending resistance intensity í¦ 200 Mpa, the thermal expansion coefficient alphaíÍ 3.6 í‡ s 10 -6 / deg.C, the thermal conductivity k íÍ 1 W / m*K. The prepared glass-ceramic Substrate materials can meet the request of the medium / low temperature co-fired industrialization with many layers wirings and the microelectronics assembling techniques of modern integrated circuit techniques.

Description

technical field [0001] The invention belongs to the technical field of glass ceramic materials, and in particular relates to a formula and a preparation method of a multilayer wiring substrate material. technical background [0002] With the rapid development of semiconductor integrated circuits and modern microelectronic assembly technology, research on substrate materials with multi-layer high-density wiring, high signal transmission speed, low loss and high reliability has attracted more and more attention. Low dielectric constant low-temperature co-fired glass-ceramic substrate materials have become a research hotspot in substrate materials due to their low dielectric constant and low-temperature co-fired characteristics. [0003] A substrate material, to meet the industrialization requirements of modern integrated circuit technology and microelectronic assembly technology, generally needs to have the following characteristics: [0004] 1), has a low dielectric constant...

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Problems solved by technology

[0017] At present, the commonly used low dielectric constant and low sintering temperature substrate materials at home and abroad mainly include the following types: a) crystallized glass system: this type of material has the characteristics of low firing temperature, small dielectric constant, and high insulation resistance, but due to During the sintering process, the glass is easy to soften and deform, resulting in a decrease in graphic accuracy, so it is not suitable for thin-line processes with a small conduction band width; b) Glass composite system: It is characterized by the use of ceramic materials with low dielectric coefficient and appropriate Proportion of glass (mostly BSG, that is, borosilicate glass—the abbreviation of "Boro Silicate Glass") is mixed as the substrate material. After ceramics, it is crushed into fine-grained powder and mixed with glass powder to prepare; c) non-glass system: such as BaSnB 2 o 6 Tie

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