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Photosensitive resin composition

A photosensitive composition and photosensitive resin technology, applied in the directions of optics, photosensitive materials for opto-mechanical equipment, opto-mechanical equipment, etc., can solve the problems of no stability improvement of the photosensitive resin composition, no instructions for use of acrylic resin, etc.

Inactive Publication Date: 2006-07-19
MERCK PATENT GMBH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in this document, there is no description on the use of an acrylic resin as an alkali-soluble resin, and there is no description on the improvement of the stability of the photosensitive resin composition over time.

Method used

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  • Photosensitive resin composition
  • Photosensitive resin composition
  • Photosensitive resin composition

Examples

Experimental program
Comparison scheme
Effect test

Synthetic example 1

[0128] Synthesis Example 1 (Synthesis of Acrylic Copolymer 1)

[0129] 700g propylene glycol monomethyl ether acetate, 171g methyl methacrylate, 90g 2-hydroxypropyl methacrylate, 39g methacrylic acid and 12.6g dimethyl 2,2'-azobis(2- Methyl propionate), poured into a 2,000ml four-neck flask equipped with a stirrer, condenser, thermometer and nitrogen inlet tube, mixed, then heated, while nitrogen was introduced, and polymerized at 85°C for continuous For 8 hours, Acrylic Copolymer 1 having a weight average molecular weight of 11,000 was obtained.

Synthetic example 2

[0130] Synthesis Example 2 (Synthesis of Acrylic Copolymer 2)

[0131] 700g propylene glycol monomethyl ether acetate, 171g methyl methacrylate, 90g 2-hydroxypropyl methacrylate, 39g methacrylic acid, 6.3g dimethyl 2,2'-azobis(2- methyl propionate) [molecular weight: 230.26] and 4.5 g of 2,2'-azobisisobutyronitrile [molecular weight: 164.21], poured into a tank equipped with a stirrer, condenser, thermometer and nitrogen introduction tube In a 2,000 ml four-neck flask, mixing was performed, followed by heating while introducing nitrogen gas, and polymerization was carried out at 85° C. for 8 hours to obtain an acrylic copolymer 2 having a weight average molecular weight of 11,000.

Synthetic example 3

[0132] Synthesis Example 3 (Synthesis of Acrylic Copolymer 3)

[0133] Pour 700g of propylene glycol monomethyl ether acetate, 171g of methyl methacrylate, 90g of 2-hydroxypropyl methacrylate, 39g of methacrylic acid and 9g of 2,2'-azobisisobutyronitrile into A 2,000ml four-necked flask equipped with a stirrer, a condenser, a thermometer and a nitrogen inlet tube was mixed, then heated, and nitrogen gas was introduced at the same time, and polymerization was carried out at 85°C for 8 hours to obtain a compound having a weight average molecular weight of 11,000 Acrylic Copolymer 3.

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PUM

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Abstract

A photosensitive resin composition comprising an alkali-soluble resin, a photosensitizer containing a quinonediazide group, and a hardener, characterized in that the alkali-soluble resin is an acrylic resin, the quinonediazide group-containing photosensitizer is a product of the reaction of a phenolic compound represented by the following general formula (I) with a naphthoquinonediazide compound, and the hardener contains epoxy groups; and a flat panel display or semiconductor element which has an interlayer dielectric or planarization film formed from this photosensitive resin composition. (I) (In the formula, R<1>, R<2>, R<3>, and R<4> each independently represents hydrogen or C1-2 alkyl; and R<5> and R<6> each independently represents C1-2 alkyl.

Description

technical field [0001] The present invention relates to a kind of photosensitive resin composition, more specifically, relate to the photosensitive resin composition suitable for manufacturing semiconductor device, flat panel display (FPD) etc., especially relate to be suitable for forming interlayer dielectric film or Photosensitive resin composition for planarizing film. Background technique [0002] In the wide field of manufacturing semiconductor integrated circuits such as LSI or FPD display surfaces or manufacturing circuit substrates for thermal heads, etc., photolithography has hitherto been employed to form micro components or achieve fine processing. In photolithography, a positive or negative photosensitive resin composition is used to form a resist pattern. In recent years, techniques for forming interlayer dielectric films or planarizing films used in semiconductor integrated circuits, FPDs, etc. have attracted attention as new applications of these photosensit...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/022G03F7/004G03F7/033G03F7/00G03F7/038G03F7/09G03F7/40H01L21/027
CPCG03F7/0226G03F7/0007G03F7/094G03F7/038G03F7/022G03F7/0233G03F7/0236G03F7/027G03F7/033G03F7/0392
Inventor 高桥修一
Owner MERCK PATENT GMBH