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Storage element, semiconductor element and method of manufacture the same

A memory element and semiconductor technology, applied in the fields of semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of high energy consumption, low speed, insufficient capacitance, etc., achieve high-speed operation, low standby current, and reduce CR effect of time constant

Active Publication Date: 2006-08-30
TAIWAN SEMICON MFG CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this conventional 1-transistor RAM (1T-RAM) cell has the disadvantages of low speed, high power consumption, and insufficient capacitance

Method used

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  • Storage element, semiconductor element and method of manufacture the same
  • Storage element, semiconductor element and method of manufacture the same
  • Storage element, semiconductor element and method of manufacture the same

Examples

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Embodiment Construction

[0022] The present invention provides a single-transistor random access memory (1T-RAM) integrated silicon-on-insulator SOI process (which can be called SOI-based 1T-RAM process) to form a 1T-RAM element on an SOI substrate. It can overcome the problems of the prior art using a silicon substrate. The SOI-based 1T-RAM device has the advantages of high-speed operation, low power consumption and long data retention time. This SOI-based 1T-RAM device has a wide range of applications in many industries and products, and it can essentially meet a wide range of semiconductor device applications, such as hybrid integrated circuits, radio frequency circuits RF, static random access memory SRAM and dynamic random access Memory technology DRAM. SOI-based 1T-RAM components can be built on a system integrated chip (system on a chip, SOC), and the system integrated chip can include storage units (such as DRAM, SRAM, flash memory Flash, rewritable programmable read-only memory EEPROM) and ...

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Abstract

The invention relates to a memory element, a semi-conductor element, and relative production, especially providing single transistor random processing memory integrated on one insulated layer without silicon, which has one capacitor, wherein said capacitor is at least partly embedded into the capacitor groove of SOI substrate; the grid structure is formed on SOI substrate; one upper electrode capacitor structure and the grid electrode are formed synchronously, with same material; the capacitor dielectric layer with capacitor structure and the grid dielectric layer are formed synchronously, made from same material. The inventive 1T-RAM element integrated on the substrate via embedding oxidizing layer is completely insulated with other elements to reduce energy consumption and improve the operation speed.

Description

technical field [0001] The present invention relates to a single-transistor random access memory (IT-RAM) technology, in particular to a 1T-RAM element having a buried capacitor embedded in a silicon-on-insulator (SOI) substrate, and to its A manufacturing method that integrates 1T-RAM and SOI processes. Background technique [0002] A conventional memory cell consists of a metal-oxide-semiconductor field-effect transistor (MOSFET) as a switching element, which is connected to a capacitor used as a digital data storage element, so it is generally called a one-transistor random processing memory (1T-RAM) element. The storage capacitor must have a minimum capacity to reliably store charge and at the same time distinguish the read data. In more modern applications, 1-transistor RAM (1T-RAM) devices use a buried capacitor structure that is part of a trench, which requires less space than a stacked capacitor structure. [0003] figure 1 is a cross-sectional view showing a con...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/12H01L21/84
CPCH01L29/945H01L21/84H01L27/1087H01L27/1203H10B12/0387
Inventor 涂国基
Owner TAIWAN SEMICON MFG CO LTD