Prepn process of ITO nanometer line and its gas sensor

A gas sensor and nanowire technology, used in instruments, scientific instruments, measuring devices, etc., to achieve the effects of fast response and recovery time, stable performance and high sensitivity

Inactive Publication Date: 2006-10-18
HUNAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, gas sensors prepared with more promising ITO nanowires have not been reported so far.

Method used

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  • Prepn process of ITO nanometer line and its gas sensor
  • Prepn process of ITO nanometer line and its gas sensor
  • Prepn process of ITO nanometer line and its gas sensor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] Embodiment 1: ITO nanowire preparation method:

[0043] (1) 5 nanometers thick gold film is deposited on the base substrate;

[0044] (2) After the powders of indium oxide, stannous oxide and graphite are fully mixed with a mass ratio of 1: 3.8: 0.8, the mixed powder is put into an alumina boat, and the substrate substrate is placed on the alumina boat;

[0045] (3) Put the alumina boat into the quartz tube, then put the quartz tube into the tube furnace, and then heat the tube furnace to 600°C for 1 minute;

[0046] (4) After the tube furnace is cooled to room temperature, the slightly yellow product-ITO nanowires are generated on the substrate;

[0047] During the above preparation process, the gas pressure in the quartz tube was 250 Pa, and at the same time, a mixed gas of argon and oxygen was fed at a rate of 10 sccm, and the volume ratio of oxygen in the mixed gas was 5%.

[0048] The base substrate is an N-type silicon substrate, and the gold film is deposited b...

Embodiment 2

[0049] Embodiment 2: ITO nanowire preparation method:

[0050] (1) spraying a 1 micron thick gold film on the base substrate;

[0051] (2) After the powders of indium oxide, stannous oxide and graphite are fully mixed with a mass ratio of 1: 4.2: 1.2, the mixed powder is placed in an alumina boat, and the substrate substrate is placed on the alumina boat;

[0052] (3) Put the alumina boat into the quartz tube, then put the quartz tube into the tube furnace, then heat the tube furnace to 1200°C for 10 hours;

[0053] (4) After the tube furnace is cooled to room temperature, the slightly yellow product-ITO nanowires are generated on the substrate;

[0054] During the above preparation process, the air pressure in the quartz tube is 250-350 Pa, and at the same time, a mixed gas of nitrogen and oxygen is fed at a speed of 30 sccm, and the volume ratio of oxygen in the mixed gas is 20%.

[0055] The base substrate is a P-type silicon substrate, and the gold film is deposited by s...

Embodiment 3

[0056] Embodiment 3: the preparation of ITO nanowire gas sensor:

[0057] (1) ITO nanowires are uniformly dispersed in an ethanol solution to make a slurry;

[0058] (2) coating the slurry on a ceramic tube with two gold electrodes and covering the electrodes;

[0059] (3) drying or sintering, that is, heating to 50°C for 10 hours;

[0060] (4) Lead connection. The resulting product is aged for 24 hours.

[0061] The substrates of the two electrodes are realized by photolithography on the ceramic sheet.

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Abstract

The present invention discloses the preparation process of ITO nanometer line and its gas sensor. The preparation process of ITO nanometer line includes the steps of: depositing one layer of gold film on substrate; setting the mixture of indium oxide, stannous oxide and graphite in certain weight proportion in a boat, setting the substrate on the boat, and heating and maintaining inside quartz tube in a furnace; maintaining the pressure at 300 Pa while introducing mixed gas containing small amount of oxygen; and cooling to room temperature to form yellowish product on the substrate. The preparation process of the gas sensor includes the steps of ultrasonically dispersing the nanometer lines in solution, stoving, coating the slurry on and between two electrodes on ceramic tube, stoving and sintering, and connecting leads. The ITO nanometer line has excellent gas sensing characteristic and the gas sensor has short response time, short restoring time, high sensitivity and other advantages.

Description

technical field [0001] The invention relates to a preparation method of an ITO nanowire and a gas sensor thereof. Background technique [0002] The application of nanotechnology in the field of sensing is expected to improve sensitivity, miniaturize components and increase integration. Due to the large specific surface area of ​​nanomaterials, their electrical properties are very sensitive to surface adsorption. When external environmental factors change, they will quickly cause changes in the surface, interface ions, and electron transport, which will significantly affect their resistance. The change in resistance can be used to Made into a sensor, it is characterized by fast response, high sensitivity and good selectivity. At present, many gas sensors have adopted nanoparticle structure. They have large specific surface area, high surface activity, and are very sensitive to the surrounding environment. However, the resistance of the sensor is large, and it is easy to aggl...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/12G01N27/407
Inventor 王太宏薛欣宇陈玉金聂棱王岩国万青邹炳锁许春梅张杰
Owner HUNAN UNIV
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