Large-area compact-coupled spraying head

Abstract

This invention relates to a large scale tight coupled spray head of an air feeding device in a reaction chamber for preparing metal organic chemical gas-phase deposition devices of semiconductor materials, in which, in a column body, ammonia capillaries and metallic organic source capillaries are arrayed alternately and axially, both of them are conducted with related air feeding cavities, the capillary has an outlet at the surface of one end of the body, there is a cooling cavity near one side of the body connected with the cooling water channels between adjacent capillaries, which greatly weakens the pre-reaction of the metal and organic source and the early resolving of the metal organic source and basically eliminates poor nitrogen and carbon pollution to the grown GaN material.

Description

technical field [0001] The device designed to prepare semiconductor materials in the present invention further refers to the gas delivery device in the reaction chamber of metal organic chemical vapor deposition equipment for preparing III-V compound semiconductor materials. Background technique [0002] The III-V wide bandgap compound semiconductor material represented by GaN has high internal and external quantum efficiency, high luminous efficiency, high thermal conductivity, high temperature resistance, acid and alkali resistance, radiation resistance, high strength and high hardness, etc. It is the first A typical representative of three generations of semiconductor materials. At present, metal-organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE) and hydride vapor phase epitaxy (HVPE) are the mainstream processes for preparing GaN, especially the preparation of GaN materials by metal-organic chemical vapor deposition, and its equipment investment is r...

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Problems solved by technology

The reaction mechanism determines that when the above-mentioned compounds are used as precursors, the process temperature is relatively high (900-1200°C). If such compounds are directly sent to the reaction chamber, the consequences are: a. It is difficult to mix the fed gas evenly , the composition and thickness uniformity requirements of the grown GaN material cannot be guaranteed; b. Since the decomposition of the above-mentioned organic atomic groups is non-selective, it is easy to cause nitrogen deficiency and carbon pollution of the resulting GaN material; c. Due to the high temperature of the reaction chamber , fed into the NH 3 As soon as the gallium source enters the reaction chamber, it reacts immediately, and when it reaches the vicinity of the substrate, there are only a few residual parts that have not had time to react, which not only results in a very low growth rate of the GaN material, but also makes it difficult to monitor the composition and thickness of the material because NH in the reaction 3 and Gallium source consumption could not be determined

At the same time, a large amount of expensive gallium source was wasted in vain

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